N-channel MOSFET
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PSMN8R3-40YS
N-channel LFPAK 40 V 8.6 mΩ standard level MOSFET
Rev. 01 — 25 June 2009 Product data ...
Description
www.DataSheet.co.kr
PSMN8R3-40YS
N-channel LFPAK 40 V 8.6 mΩ standard level MOSFET
Rev. 01 — 25 June 2009 Product data sheet
1. Product profile
1.1 General description
Standard level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.
1.2 Features and benefits
Advanced TrenchMOS provides low RDSon and low gate charge High efficiency gains in switching power converters Improved mechanical and thermal characteristics LFPAK provides maximum power density in a Power SO8 package
1.3 Applications
DC-to-DC convertors Lithium-ion battery protection Load switching Motor control Server power supplies
1.4 Quick reference data
Table 1. VDS ID Ptot Tj Quick reference Conditions Tmb = 25 °C; VGS = 10 V; see Figure 1 Tmb = 25 °C; see Figure 2 Min -55 VGS = 10 V; Tj(init) = 25 °C; ID = 62 A; Vsup ≤ 40 V; unclamped; RGS = 50 Ω VGS = 10 V; ID = 25 A; VDS = 20 V; see Figure 14; see Figure 15 Typ Max 40 70 74 175 33 Unit V A W °C mJ drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C drain current total power dissipation junction temperature Symbol Parameter
Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy Dynamic characteristics QGD QG(tot) gate-drain charge total gate charge 4.5 20 nC nC
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NXP Semiconductors
PSMN8R3-40YS
N-channel LFPAK 40 V 8.6 mΩ standard level MOSFE...
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