N-channel MOSFET
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PSMN8R0-40PS
N-channel 40 V 7.6 mΩ standard level MOSFET
Rev. 02 — 25 June 2009 Product data sheet
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Description
www.DataSheet.co.kr
PSMN8R0-40PS
N-channel 40 V 7.6 mΩ standard level MOSFET
Rev. 02 — 25 June 2009 Product data sheet
1. Product profile
1.1 General description
Standard level N-channel MOSFET in TO220 package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.
1.2 Features and benefits
High efficiency due to low switching and conduction losses Suitable for standard level gate drive sources
1.3 Applications
DC-to-DC convertors Load switching Motor control Server power supplies
1.4 Quick reference data
Table 1. VDS ID Ptot Quick reference Conditions Tmb = 25 °C; VGS = 10 V; see Figure 1 Tmb = 25 °C; see Figure 2 Min Typ Max 40 77 86 Unit V A W drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C drain current total power dissipation gate-drain charge Symbol Parameter
Dynamic characteristics QGD VGS = 10 V; ID = 25 A; VDS = 20 V; see Figure 14; see Figure 15 VGS = 10 V; ID = 25 A; Tj = 25 °C; see Figure 13 [1] 3.8 nC
Static characteristics RDSon drain-source on-state resistance 6.2 7.6 mΩ
[1]
Measured 3 mm from package.
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NXP Semiconductors
PSMN8R0-40PS
N-channel 40 V 7.6 mΩ standard level MOSFET
2. Pinning information
Table 2. Pin 1 2 3 mb Pinning information Symbol G D S D Description gate drain source mounting base; connected to drain
mb
D
Simplified outline
Graphic symbol
G
mbb076
S
1 2 3
SOT78 (TO-220AB...
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