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PSMN3R7-25YLC Dataheets PDF



Part Number PSMN3R7-25YLC
Manufacturers NXP Semiconductors
Logo NXP Semiconductors
Description N-channel MOSFET
Datasheet PSMN3R7-25YLC DatasheetPSMN3R7-25YLC Datasheet (PDF)

www.DataSheet.co.kr LF PA K PSMN3R7-25YLC N-channel 25 V 3.9 mΩ logic level MOSFET in LFPAK using NextPower technology Rev. 01 — 2 May 2011 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits „ High reliability Power SO8 package, qualified to 175°C „ Low parasitic inductance and.

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www.DataSheet.co.kr LF PA K PSMN3R7-25YLC N-channel 25 V 3.9 mΩ logic level MOSFET in LFPAK using NextPower technology Rev. 01 — 2 May 2011 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits „ High reliability Power SO8 package, qualified to 175°C „ Low parasitic inductance and resistance „ Optimised for 4.5V Gate drive utilising NextPower Superjunction technology „ Ultra low QG, QGD and QOSS for high system efficiencies at low and high loads 1.3 Applications „ DC-to-DC converters „ Load switching „ Power OR-ing „ Server power supplies „ Sync rectifier 1.4 Quick reference data Table 1. Symbol VDS ID Ptot Tj RDSon Quick reference data Parameter drain-source voltage drain current total power dissipation junction temperature drain-source on-state resistance VGS = 4.5 V; ID = 20 A; Tj = 25 °C; see Figure 12 VGS = 10 V; ID = 20 A; Tj = 25 °C; see Figure 12 Conditions 25 °C ≤ Tj ≤ 175 °C Tmb = 25 °C; VGS = 10 V; see Figure 1 Tmb = 25 °C; see Figure 2 Min -55 Typ Max Unit 25 97 64 175 V A W °C mΩ mΩ Static characteristics 4.25 5.1 3.3 3.9 Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr NXP Semiconductors PSMN3R7-25YLC N-channel 25 V 3.9 mΩ logic level MOSFET in LFPAK using NextPower Quick reference data …continued Parameter gate-drain charge total gate charge Conditions VGS = 4.5 V; ID = 20 A; VDS = 12 V; see Figure 14; see Figure 15 Min Typ 3 Max Unit nC nC Table 1. Symbol QGD QG(tot) Dynamic characteristics 10.1 - 2. Pinning information Table 2. Pin 1 2 3 4 mb Pinning information Symbol Description S S S G D source source source gate mounting base; connected to drain 1 2 3 4 mbb076 Simplified outline mb Graphic symbol D G S SOT669 (LFPAK; Power-SO8) 3. Ordering information Table 3. Ordering information Package Name PSMN3R7-25YLC LFPAK; Power-SO8 Description plastic single-ended surface-mounted package; 4 leads Version SOT669 Type number 4. Marking Table 4. Marking codes Marking code[1] 3C725L Type number PSMN3R7-25YLC [1] % = placeholder for manufacturing site code PSMN3R7-25YLC All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 01 — 2 May 2011 2 of 15 Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr NXP Semiconductors PSMN3R7-25YLC N-channel 25 V 3.9 mΩ logic level MOSFET in LFPAK using NextPower 5. Limiting values Table 5. Symbol VDS VDGR VGS ID IDM Ptot Tstg Tj Tsld(M) VESD IS ISM EDS(AL)S Limiting values Parameter drain-source voltage drain-gate voltage gate-source voltage drain current peak drain current total power dissipation storage temperature junction temperature peak soldering temperature electrostatic discharge voltage source current peak source current non-repetitive drain-source avalanche energy MM (JEDEC JESD22-A115) Tmb = 25 °C pulsed; tp ≤ 10 µs; Tmb = 25 °C VGS = 10 V; Tj(init) = 25 °C; ID = 98 A; Vsup ≤ 25 V; unclamped; RGS = 50 Ω; see Figure 3 VGS = 10 V; Tmb = 25 °C; see Figure 1 VGS = 10 V; Tmb = 100 °C; see Figure 1 pulsed; tp ≤ 10 µs; Tmb = 25 °C; see Figure 4 Tmb = 25 °C; see Figure 2 Conditions 25 °C ≤ Tj ≤ 175 °C 25 °C ≤ Tj ≤ 175 °C; RGS = 20 kΩ Min -20 -55 -55 310 Max 25 25 20 97 68 387 64 175 175 260 58 387 24 Unit V V V A A A W °C °C °C V A A mJ In accordance with the Absolute Maximum Rating System (IEC 60134). Source-drain diode Avalanche ruggedness 120 ID (A) 100 003a a f 855 120 Pder (%) 80 03na19 80 60 40 40 20 0 0 50 100 150 200 Tmb ( C) 0 0 50 100 150 Tmb (°C) 200 Fig 1. Continuous drain current as a function of mounting base temperature Fig 2. Normalized total power dissipation as a function of mounting base temperature PSMN3R7-25YLC All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 01 — 2 May 2011 3 of 15 Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr NXP Semiconductors PSMN3R7-25YLC N-channel 25 V 3.9 mΩ logic level MOSFET in LFPAK using NextPower 103 I AL (A) 102 003a a f 869 (1) 10 (2) 1 10-1 10-3 10-2 10-1 1 tAL (ms ) 10 Fig 3. 104 ID (A) 103 Single pulse avalanche rating; avalanche current as a function of avalanche time 003aaf856 Limit RDSon = VDS / ID 10 2 tp =10 μ s 100 μ s 10 DC 1 ms 1 10 ms 100 ms 10-1 10-1 1 10 VDS (V) 102 Fig 4. Safe operating area; continuous and peak drain currents as a function of drain-source voltage PSMN3R7-25YLC All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 01 — 2 May 2011 4 of 15 Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr NXP Semiconductors PSMN3R7-25YLC N-channel 25 V 3.9 mΩ logic level MOSFET in LF.


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