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LF PA K
PSMN3R7-25YLC
N-channel 25 V 3.9 mΩ logic level MOSFET in LFPAK using NextPower technology
Rev. 01 — 2 May 2011 Product data sheet
1. Product profile
1.1 General description
Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.
1.2 Features and benefits
High reliability Power SO8 package, qualified to 175°C Low parasitic inductance and resistance Optimised for 4.5V Gate drive utilising NextPower Superjunction technology Ultra low QG, QGD and QOSS for high system efficiencies at low and high loads
1.3 Applications
DC-to-DC converters Load switching Power OR-ing Server power supplies Sync rectifier
1.4 Quick reference data
Table 1. Symbol VDS ID Ptot Tj RDSon Quick reference data Parameter drain-source voltage drain current total power dissipation junction temperature drain-source on-state resistance VGS = 4.5 V; ID = 20 A; Tj = 25 °C; see Figure 12 VGS = 10 V; ID = 20 A; Tj = 25 °C; see Figure 12 Conditions 25 °C ≤ Tj ≤ 175 °C Tmb = 25 °C; VGS = 10 V; see Figure 1 Tmb = 25 °C; see Figure 2 Min -55 Typ Max Unit 25 97 64 175 V A W °C mΩ mΩ
Static characteristics 4.25 5.1 3.3 3.9
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NXP Semiconductors
PSMN3R7-25YLC
N-channel 25 V 3.9 mΩ logic level MOSFET in LFPAK using NextPower
Quick reference data …continued Parameter gate-drain charge total gate charge Conditions VGS = 4.5 V; ID = 20 A; VDS = 12 V; see Figure 14; see Figure 15 Min Typ 3 Max Unit nC nC
Table 1. Symbol QGD QG(tot)
Dynamic characteristics 10.1 -
2. Pinning information
Table 2. Pin 1 2 3 4 mb Pinning information Symbol Description S S S G D source source source gate mounting base; connected to drain
1 2 3 4
mbb076
Simplified outline
mb
Graphic symbol
D
G S
SOT669 (LFPAK; Power-SO8)
3. Ordering information
Table 3. Ordering information Package Name PSMN3R7-25YLC LFPAK; Power-SO8 Description plastic single-ended surface-mounted package; 4 leads Version SOT669 Type number
4. Marking
Table 4. Marking codes Marking code[1] 3C725L Type number PSMN3R7-25YLC
[1] % = placeholder for manufacturing site code
PSMN3R7-25YLC
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 01 — 2 May 2011
2 of 15
Datasheet pdf - http://www.DataSheet4U.net/
www.DataSheet.co.kr
NXP Semiconductors
PSMN3R7-25YLC
N-channel 25 V 3.9 mΩ logic level MOSFET in LFPAK using NextPower
5. Limiting values
Table 5. Symbol VDS VDGR VGS ID IDM Ptot Tstg Tj Tsld(M) VESD IS ISM EDS(AL)S Limiting values Parameter drain-source voltage drain-gate voltage gate-source voltage drain current peak drain current total power dissipation storage temperature junction temperature peak soldering temperature electrostatic discharge voltage source current peak source current non-repetitive drain-source avalanche energy MM (JEDEC JESD22-A115) Tmb = 25 °C pulsed; tp ≤ 10 µs; Tmb = 25 °C VGS = 10 V; Tj(init) = 25 °C; ID = 98 A; Vsup ≤ 25 V; unclamped; RGS = 50 Ω; see Figure 3 VGS = 10 V; Tmb = 25 °C; see Figure 1 VGS = 10 V; Tmb = 100 °C; see Figure 1 pulsed; tp ≤ 10 µs; Tmb = 25 °C; see Figure 4 Tmb = 25 °C; see Figure 2 Conditions 25 °C ≤ Tj ≤ 175 °C 25 °C ≤ Tj ≤ 175 °C; RGS = 20 kΩ Min -20 -55 -55 310 Max 25 25 20 97 68 387 64 175 175 260 58 387 24 Unit V V V A A A W °C °C °C V A A mJ
In accordance with the Absolute Maximum Rating System (IEC 60134).
Source-drain diode
Avalanche ruggedness
120 ID (A) 100
003a a f 855
120 Pder (%) 80
03na19
80
60
40
40
20
0 0 50 100 150 200 Tmb ( C)
0
0
50
100
150
Tmb (°C)
200
Fig 1.
Continuous drain current as a function of mounting base temperature
Fig 2.
Normalized total power dissipation as a function of mounting base temperature
PSMN3R7-25YLC
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 01 — 2 May 2011
3 of 15
Datasheet pdf - http://www.DataSheet4U.net/
www.DataSheet.co.kr
NXP Semiconductors
PSMN3R7-25YLC
N-channel 25 V 3.9 mΩ logic level MOSFET in LFPAK using NextPower
103 I AL (A) 102
003a a f 869
(1)
10
(2)
1
10-1 10-3
10-2
10-1
1
tAL (ms )
10
Fig 3.
104 ID (A) 103
Single pulse avalanche rating; avalanche current as a function of avalanche time
003aaf856
Limit RDSon = VDS / ID 10
2
tp =10 μ s 100 μ s
10
DC 1 ms
1
10 ms 100 ms
10-1 10-1
1
10
VDS (V)
102
Fig 4.
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
PSMN3R7-25YLC
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 01 — 2 May 2011
4 of 15
Datasheet pdf - http://www.DataSheet4U.net/
www.DataSheet.co.kr
NXP Semiconductors
PSMN3R7-25YLC
N-channel 25 V 3.9 mΩ logic level MOSFET in LF.