N-channel MOSFET
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I2P AK
PSMN3R5-80ES
N-channel 80 V, 3.5 mΩ standard level MOSF...
Description
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I2P AK
PSMN3R5-80ES
N-channel 80 V, 3.5 mΩ standard level MOSFET in I2PAK
Rev. 02 — 19 April 2011 Product data sheet
1. Product profile
1.1 General description
Standard level N-channel MOSFET in I2PAK package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.
1.2 Features and benefits
High efficiency due to low switching and conduction losses Suitable for standard level gate drive
1.3 Applications
DC-to-DC converters Load switch Motor control Server power supplies
1.4 Quick reference data
Table 1. Symbol VDS ID Ptot Tj RDSon Quick reference data Parameter drain-source voltage drain current total power dissipation junction temperature drain-source on-state resistance VGS = 10 V; ID = 25 A; Tj = 100 °C; see Figure 12 VGS = 10 V; ID = 25 A; Tj = 25 °C; see Figure 13 Dynamic characteristics QGD QG(tot) gate-drain charge total gate charge VGS = 10 V; ID = 75 A; VDS = 40 V; see Figure 14; see Figure 15 VGS = 10 V; Tj(init) = 25 °C; ID = 120 A; Vsup ≤ 80 V; RGS = 50 Ω; unclamped 27 139 nC nC
[2]
Conditions Tj ≥ 25 °C; Tj ≤ 175 °C Tmb = 25 °C; VGS = 10 V; see Figure 1 Tmb = 25 °C; see Figure 2
[1]
Min -55 -
Typ 5 3
Max Unit 80 120 338 175 5.8 3.5 V A W °C mΩ mΩ
Static characteristics
Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy 676 mJ
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