PSMN3R5-30LL

w w w . D a t a S h e e t . c o . k r PSMN3R5-30LL -8 N-channel DFN3333-8 30 V 3.6 mΩ logic level MOSFET Rev. 4 — 12 December 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in DFN3333-8 package qualified to 150 °C. This product is designed and qualified for use in a wide range of industrial, communications and power supply equipment. DF N3 333 1.2 Features and benefits  High efficiency due to low switching and conduction losses  Small footprint for compact designs  Suitable for logic level gate drive sources 1.3 Applications  Battery protection  DC-to-DC converters  Load switching  Power ORing 1.4 Quick reference data Table 1. Symbol VDS ID Ptot Tj RDSon Quick reference data Parameter drain-source voltage drain current total power dissipation junction temperature drain-source on-state resistance VGS = 10 V; ID = 10 A; Tj = 100 °C; see Figure 12 VGS = 4.5 V; ID = 10 A; Tj = 25 °C; see Figure 13 VGS = 10 V; ID = 10 A; Tj = 25 °C; see Figure 13 Dynamic characteristics QGD gate-drain charge VGS = 10 V; ID = 15 A; VDS = 15 V; see Figure 14; see Figure 15 5 nC Conditions Tj ≥ 25 °C; Tj ≤ 150 °C Tmb = 25 °C; VGS = 10 V; see Figure 1 Tmb = 25 °C; see Figure 2 Min -55 Typ 4.3 3 Max 30 40 71 150 5 5.6 3.6 Unit V A W °C mΩ mΩ mΩ Static characteristics D a t a s h e e t www.DataSheet.co.kr NXP Semiconductors PSMN3R5-30LL N-channel DFN3333-8 30 V 3.6 mΩ logic level MOSFET Table 1. Symbol QG(to...