N-channel MOSFET
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PSMN3R0-60PS
N-channel 60 V 3.0 mΩ standard level MOSFET
Rev. 01 — 23 November 2009 Product data sh...
Description
www.DataSheet.co.kr
PSMN3R0-60PS
N-channel 60 V 3.0 mΩ standard level MOSFET
Rev. 01 — 23 November 2009 Product data sheet
1. Product profile
1.1 General description
Standard level N-channel MOSFET in a TO220 package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.
1.2 Features and benefits
High efficiency due to low switching and conduction losses Suitable for standard level gate drive sources
1.3 Applications
DC-to-DC convertors Load switching Motor control Server power supplies
1.4 Quick reference data
Table 1. VDS ID Ptot Quick reference Conditions Tmb = 25 °C; VGS = 10 V; see Figure 1 Tmb = 25 °C; see Figure 2
[1]
Symbol Parameter drain current total power dissipation gate-drain charge
Min -
Typ -
Max 60 100 306
Unit V A W
drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C
Dynamic characteristics QGD VGS = 10 V; ID = 80 A; VDS = 12 V; see Figure 13 and 14 VGS = 10 V; ID = 25 A; Tj = 25 °C; see Figure 11 and 12 28 nC
Static characteristics RDSon drain-source on-state resistance 2.4 3 mΩ
[1]
Continuous current is limited by package.
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NXP Semiconductors
PSMN3R0-60PS
N-channel 60 V 3.0 mΩ standard level MOSFET
2. Pinning information
Table 2. Pin 1 2 3 mb Pinning information Symbol G D S D Description gate drain source mounting base; connected to drain
mb
D
Simplified outline
Graphic symbol
G
mbb07...
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