PSMN1R6-30PL

www.DataSheet.co.kr PSMN1R6-30PL N-channel 30 V 1.7 mΩ logic level MOSFET Rev. 02 — 25 June 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in TO220 package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits „ High efficiency due to low switching and conduction losses „ Suitable for logic level gate drive sources 1.3 Applications „ DC-to-DC converters „ Load switiching „ Motor control „ Server power supplies 1.4 Quick reference data Table 1. VDS ID Ptot Quick reference Conditions Tmb = 25 °C; VGS = 10 V; see Figure 1; Tmb = 25 °C; see Figure 2 [1] Min Typ Max 30 100 306 Unit V A W drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C drain current total power dissipation gate-drain charge Symbol Parameter Dynamic characteristics QGD VGS = 4.5 V; ID = 25 A; VDS = 15 V; see Figure 14; see Figure 15 VGS = 4.5 V; ID = 25 A; VDS = 15 V; see Figure 14 VGS = 10 V; ID = 25 A; Tj = 25 °C; [2] 27 nC QG(tot) total gate charge - 101 - nC Static characteristics RDSon drain-source on-state resistance 1.4 1.7 mΩ [1] [2] Continuous current is limited by package. Measured 3 mm from package. Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr NXP Semiconductors PSMN1R6-30PL N-channel 30 V 1.7 mΩ logic level MOSFET 2. Pinning information Table 2. Pin 1 2 3 mb Pinning information Symbol G D S D Description gate dra...