N-channel MOSFET
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PSMN1R5-30YL
N-channel 30 V 1.5 mΩ logic level MOSFET in LFPAK
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Description
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PSMN1R5-30YL
N-channel 30 V 1.5 mΩ logic level MOSFET in LFPAK
Rev. 01 — 9 April 2010 Product data sheet
1. Product profile
1.1 General description
Logic level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.
1.2 Features and benefits
Advanced TrenchMOS provides low RDSon and low gate charge High efficiency gains in switching power convertors Improved mechanical and thermal characteristics LFPAK provides maximum power density in a Power SO8 package
1.3 Applications
DC-to-DC converters Lithium-ion battery protection Load switching Motor control Server power supplies
1.4 Quick reference data
Table 1. Symbol VDS ID Ptot Tj Quick reference data Parameter drain-source voltage drain current total power dissipation junction temperature drain-source on-state resistance VGS = 10 V; ID = 15 A; Tj = 100 °C; see Figure 14 VGS = 10 V; ID = 15 A; Tj = 25 °C Conditions Tj ≥ 25 °C; Tj ≤ 175 °C Tmb = 25 °C; VGS = 10 V; see Figure 1 Tmb = 25 °C; see Figure 2
[1]
Min -55
Typ -
Max Unit 30 100 109 175 V A W °C
Static characteristics RDSon 1.3 2.4 1.5 mΩ mΩ
Dynamic characteristics QGD gate-drain charge VGS = 4.5 V; ID = 10 A; VDS = 12 V; see Figure 15; see Figure 16 8.7 nC
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PSMN1R5-30YL
N-channel 30 V 1.5 mΩ logic level ...
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