Document
Transistors
2SC3312
Silicon NPN epitaxial planar type
For low-frequency and low-noise amplification Complementary to 2SA1310
4.0±0.2
2.0±0.2
Unit: mm
15.6±0.5 (0.8) (0.8) 3.0±0.2 7.6
■ Features
0.75 max.
• Optimum for high-density mounting
• Allowing supply with the radial taping • Low noise voltage NV
■ Absolute Maximum Ratings Ta = 25°C
/ Parameter
Symbol Rating
Unit
e ) Collector-base voltage (Emitter open) VCBO
60
V
c type Collector-emitter voltage (Base open) VCEO
55
V
n d ge. ed Emitter-base voltage (Collector open) VEBO
7
V
le sta ntinu Collector current
IC
100
mA
a e cyc isco Peak collector current
ICP
200
mA
life d, d Collector power dissipation
PC
300
mW
n u duct type Junction temperature
Tj
150
°C
te tin Pro ued Storage temperature
Tstg −55 to +150 °C
0.45+–00..1200
(2.5) (2.5)
123
0.45+–00..1200 0.7±0.1
1: Emitter 2: Collector 3: Base NS-B1 Package
in n es follopwlianngefdoudriscontin ■ Electrical Characteristics Ta = 25°C ± 3°C
a o clud pe, Parameter
Symbol
Conditions
Min Typ Max Unit
c ed in ce ty Collector-base voltage (Emitter open) VCBO IC = 10 µA, IE = 0
60
V
tinu nan Collector-emitter voltage (Base open) VCEO IC = 2 mA, IB = 0
55
V
M is iscon ainte Emitter-base voltage (Collector open) VEBO IE = 10 µA, IC = 0
7
V
e/D e, m Base-emitter voltage
VBE VCE = 1 V, IC = 30 mA
1
V
D anc typ Collector-base cutoff current (Emitter open) ICBO VCB = 20 V, IE = 0
0.1
µA
inten ance Collector-emitter cutoff current (Base open) ICEO VCE = 20 V, IB = 0
1
µA
Ma inten Forward current transfer ratio *
hFE VCE = 5 V, IC = 2 mA
180
700
ma Collector-emitter saturation voltage
VCE(sat) IC = 100 mA, IB = 10 mA
1
V
ned Transition frequency
fT
VCB = 5 V, IE = −2 mA, f = 200 MHz
200
MHz
(pla Noise voltage
NV VCE = 10 V, IC = 1 mA, GV = 80 dB
150 mV
Rg = 100 kΩ, Function = FLAT
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification
Rank
R
S
T
hFE
180 to 360 260 to 520 360 to 700
Publication date: March 2003
SJC00128BED
1
2SC3312
Collector power dissipation PC (mW)
Collector-emitter saturation voltage VCE(sat) (V)
PC Ta
500
400
IC VCE
240 Ta = 25°C
200
IC VBE
120
25°C
VCE = 5 V
100
Ta = 75°C
−25°C
Collector current IC (mA)
Collector current IC (mA)
160
80
300
IB = 400 µA
350 µA
120
330 µA
60
250 µA
200
200 µA
80
40
150 µA
100
0
0
40
80
120
160
Ambient temperature Ta (°C)
100 µA 40
50 µA
0 0 2 4 6 8 10 12 Collector-emitter voltage VCE (V)
20
0 0 0.4 0.8 1.2 1.6 2.0 Base-emitter voltage VBE (V)
ce/ 100 an ed 10 n u 1 te tin 0.1 in n 0.01 a o 0.1 M isc 5 D 4
3 2
pe) VCE(sat) IC e. d ty IC / IB = 10
Transition frequency fT (MHz)
Forward current transfer ratio hFE
four Proondtiuncutelidfetcyypceled,sdtaisgcontinue Ta = 75°C ing isc 25°C
follow ed d −25°C
cludes pe, plan 1
10
100
d in e ty Collector current IC (mA)
1 000 800
hFE IC
VCE = 5 V
600
Ta = 75°C
400
25°C
−25°C
200
0
0.1
1
10
100
Collector current IC (mA)
fT IE
400 VCB = 5 V Ta = 25°C
300
200
100
0
− 0.1
−1
−10
−100
Emitter current IE (mA)
/Discontimnuaeintenanc Cob VCB ance type, IE = 0
f = 1 MHz
(planeMd aminatienntenance Ta = 25°C
NV IC
240
VCE = 10 V
GV = 80 dB
200
Function = FLAT
Ta = 25°C
160
120 Rg = 100 kΩ
80
22 kΩ
Noise voltage NV (mV)
1
40
4.1 kΩ
0
1
10
100
Collector-base voltage VCB (V)
0
0.01
0.1
1
Collector current IC (mA)
(pF)
Cob
Collector output capacitance (Common base, input open circuited)
2
SJC00128BED
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