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2SC3312 Dataheets PDF



Part Number 2SC3312
Manufacturers Panasonic Semiconductor
Logo Panasonic Semiconductor
Description Silicon NPN Transistor
Datasheet 2SC3312 Datasheet2SC3312 Datasheet (PDF)

Transistors 2SC3312 Silicon NPN epitaxial planar type For low-frequency and low-noise amplification Complementary to 2SA1310 4.0±0.2 2.0±0.2 Unit: mm 15.6±0.5 (0.8) (0.8) 3.0±0.2 7.6 ■ Features 0.75 max. • Optimum for high-density mounting • Allowing supply with the radial taping • Low noise voltage NV ■ Absolute Maximum Ratings Ta = 25°C / Parameter Symbol Rating Unit e ) Collector-base voltage (Emitter open) VCBO 60 V c type Collector-emitter voltage (Base open) VCEO 55 V n.

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Transistors 2SC3312 Silicon NPN epitaxial planar type For low-frequency and low-noise amplification Complementary to 2SA1310 4.0±0.2 2.0±0.2 Unit: mm 15.6±0.5 (0.8) (0.8) 3.0±0.2 7.6 ■ Features 0.75 max. • Optimum for high-density mounting • Allowing supply with the radial taping • Low noise voltage NV ■ Absolute Maximum Ratings Ta = 25°C / Parameter Symbol Rating Unit e ) Collector-base voltage (Emitter open) VCBO 60 V c type Collector-emitter voltage (Base open) VCEO 55 V n d ge. ed Emitter-base voltage (Collector open) VEBO 7 V le sta ntinu Collector current IC 100 mA a e cyc isco Peak collector current ICP 200 mA life d, d Collector power dissipation PC 300 mW n u duct type Junction temperature Tj 150 °C te tin Pro ued Storage temperature Tstg −55 to +150 °C 0.45+–00..1200 (2.5) (2.5) 123 0.45+–00..1200 0.7±0.1 1: Emitter 2: Collector 3: Base NS-B1 Package in n es follopwlianngefdoudriscontin ■ Electrical Characteristics Ta = 25°C ± 3°C a o clud pe, Parameter Symbol Conditions Min Typ Max Unit c ed in ce ty Collector-base voltage (Emitter open) VCBO IC = 10 µA, IE = 0 60 V tinu nan Collector-emitter voltage (Base open) VCEO IC = 2 mA, IB = 0 55 V M is iscon ainte Emitter-base voltage (Collector open) VEBO IE = 10 µA, IC = 0 7 V e/D e, m Base-emitter voltage VBE VCE = 1 V, IC = 30 mA 1 V D anc typ Collector-base cutoff current (Emitter open) ICBO VCB = 20 V, IE = 0 0.1 µA inten ance Collector-emitter cutoff current (Base open) ICEO VCE = 20 V, IB = 0 1 µA Ma inten Forward current transfer ratio * hFE VCE = 5 V, IC = 2 mA 180 700  ma Collector-emitter saturation voltage VCE(sat) IC = 100 mA, IB = 10 mA 1 V ned Transition frequency fT VCB = 5 V, IE = −2 mA, f = 200 MHz 200 MHz (pla Noise voltage NV VCE = 10 V, IC = 1 mA, GV = 80 dB 150 mV Rg = 100 kΩ, Function = FLAT Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank R S T hFE 180 to 360 260 to 520 360 to 700 Publication date: March 2003 SJC00128BED 1 2SC3312 Collector power dissipation PC (mW) Collector-emitter saturation voltage VCE(sat) (V) PC  Ta 500 400 IC  VCE 240 Ta = 25°C 200 IC  VBE 120 25°C VCE = 5 V 100 Ta = 75°C −25°C Collector current IC (mA) Collector current IC (mA) 160 80 300 IB = 400 µA 350 µA 120 330 µA 60 250 µA 200 200 µA 80 40 150 µA 100 0 0 40 80 120 160 Ambient temperature Ta (°C) 100 µA 40 50 µA 0 0 2 4 6 8 10 12 Collector-emitter voltage VCE (V) 20 0 0 0.4 0.8 1.2 1.6 2.0 Base-emitter voltage VBE (V) ce/ 100 an ed 10 n u 1 te tin 0.1 in n 0.01 a o 0.1 M isc 5 D 4 3 2 pe) VCE(sat)  IC e. d ty IC / IB = 10 Transition frequency fT (MHz) Forward current transfer ratio hFE four Proondtiuncutelidfetcyypceled,sdtaisgcontinue Ta = 75°C ing isc 25°C follow ed d −25°C cludes pe, plan 1 10 100 d in e ty Collector current IC (mA) 1 000 800 hFE  IC VCE = 5 V 600 Ta = 75°C 400 25°C −25°C 200 0 0.1 1 10 100 Collector current IC (mA) fT  IE 400 VCB = 5 V Ta = 25°C 300 200 100 0 − 0.1 −1 −10 −100 Emitter current IE (mA) /Discontimnuaeintenanc Cob  VCB ance type, IE = 0 f = 1 MHz (planeMd aminatienntenance Ta = 25°C NV  IC 240 VCE = 10 V GV = 80 dB 200 Function = FLAT Ta = 25°C 160 120 Rg = 100 kΩ 80 22 kΩ Noise voltage NV (mV) 1 40 4.1 kΩ 0 1 10 100 Collector-base voltage VCB (V) 0 0.01 0.1 1 Collector current IC (mA) (pF) Cob Collector output capacitance (Common base, input open circuited) 2 SJC00128BED Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. (2) The technical information described in this book is intended only to show the main characteristics and application circuit examples of the products, and no license is granted under any intellectual property right or other right owned by our company or any other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other company which may arise as a result of the use of technical information described in this book. (3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: – Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combu.


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