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PMEG2010EPK

NXP Semiconductors

low VF MEGA Schottky barrier rectifier

www.DataSheet.co.kr PMEG2010EPK 62 '   20 V, 1 A low VF MEGA Schottky barrier rectifier Rev. 1 — 20 January 2012 P...


NXP Semiconductors

PMEG2010EPK

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www.DataSheet.co.kr PMEG2010EPK 62 '   20 V, 1 A low VF MEGA Schottky barrier rectifier Rev. 1 — 20 January 2012 Product data sheet 1. Product profile 1.1 General description Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a leadless ultra small SOD1608 Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. 1.2 Features and benefits  Average forward current: IF(AV) ≤ 1 A  Reverse voltage: VR ≤ 20 V  Low forward voltage VF ≤ 415 mV  Low reverse current  AEC-Q101 qualified  Solderable side pads  Package height typ. 0.37 mm  Ultra small and leadless SMD plastic package 1.3 Applications  Low voltage rectification  High efficiency DC-to-DC conversion  Switch mode power supply  LED backlight for mobile application  Low power consumption applications  Ultra high-speed switching  Reverse polarity protection 1.4 Quick reference data Table 1. Symbol IF(AV) Quick reference data Parameter average forward current Conditions square wave; δ = 0.5; f = 20 kHz; Tamb ≤ 110 °C square wave; δ = 0.5; f = 20 kHz; Tsp ≤ 135 °C VR VF IR [1] [1] Min - Typ 370 50 Max 1 1 20 415 250 Unit A A V mV µA reverse voltage forward voltage reverse current Tj = 25 °C IF = 1 A; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tj = 25 °C VR = 10 V; Tj = 25 °C Device mounted on a ceramic Printed-Circuit Board (PCB), Al2O3, standard footprint. Datasheet pdf - http://www.Dat...




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