2SC3307

TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC3307 2SC3307 High-Speed and High-Voltage Switching Applications Switching Regulator Applications High-Speed DC-DC Converter Applications Industrial Applications Unit: mm Excellent switching times: tr = 1.0 μs (max), tf = 1.0 μs (max) (IC = 5 A) High collector breakdown voltage: VCEO = 800 V Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current DC Pulse Base current Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range VCBO VCEO VEBO IC ICP IB PC Tj Tstg 900 800 7 10 15 3 150 150 −55 to 150 V V V A A W °C °C JEDEC ― JEITA ― TOSHIBA 2-21F1A Weight: 9.75 g (typ.) Note1: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 http://store.iiic.cc/ 2009-07-17 Electrical Characteristics (Ta = 25°C) 2SC3307 Characteristics Colle...