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2SC3307 Dataheets PDF



Part Number 2SC3307
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description Silicon NPN Transistor
Datasheet 2SC3307 Datasheet2SC3307 Datasheet (PDF)

TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC3307 2SC3307 High-Speed and High-Voltage Switching Applications Switching Regulator Applications High-Speed DC-DC Converter Applications Industrial Applications Unit: mm • Excellent switching times: tr = 1.0 μs (max), tf = 1.0 μs (max) (IC = 5 A) • High collector breakdown voltage: VCEO = 800 V Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base vol.

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TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC3307 2SC3307 High-Speed and High-Voltage Switching Applications Switching Regulator Applications High-Speed DC-DC Converter Applications Industrial Applications Unit: mm • Excellent switching times: tr = 1.0 μs (max), tf = 1.0 μs (max) (IC = 5 A) • High collector breakdown voltage: VCEO = 800 V Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current DC Pulse Base current Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range VCBO VCEO VEBO IC ICP IB PC Tj Tstg 900 800 7 10 15 3 150 150 −55 to 150 V V V A A W °C °C JEDEC ― JEITA ― TOSHIBA 2-21F1A Weight: 9.75 g (typ.) Note1: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 http://store.iiic.cc/ 2009-07-17 Electrical Characteristics (Ta = 25°C) 2SC3307 Characteristics Collector cut-off current Emitter cut-off current Collector-base breakdown voltage Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Rise time Switching time Storage time Fall time Symbol Test Condition Min ICBO IEBO V (BR) CBO V (BR) CEO hFE (1) hFE (2) VCE (sat) VBE (sat) VCB = 800 V, IE = 0 VEB = 7 V, IC = 0 IC = 1 mA, IE = 0 IC = 10 mA, IB = 0 VCE = 5 V, IC = 10 mA VCE = 5 V, IC = 5 A IC = 5 A, IB = 1 A IC = 5 A, IB = 1 A ― ― 900 800 10 10 ― ― tr 20 μs Input IC = IB1 5 A Output ― Typ. ― ― ― ― ― ― ― ― ― Max 100 1 ― ― ― ― 1 1.5 1 Unit μA mA V V V V IB1 IB2 80 Ω tstg IB2 ― ― 3 μs VCC ≈ 400 V tf IB1 = 0.5A , I B2 = 1.5 A, duty cycle ≤ 1% ―― 1 Marking TOSHIBA 2SC3307 JAPAN Part No. (or abbreviation code) Lot No. Note2 Note2: A line under a Lot No. identifies the indication of product Labels. Not underlined: [[Pb]]/INCLUDES > MCV Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. 2 http://store.iiic.cc/ 2009-07-17 Collector current IC (A) IC – VCE 12 Common emitter 2 1.6 10 1.4 Tc = 25°C 1.2 1.0 8 0.8 0.6 6 0.4 4 0.2 IB = 0.1 A 2 0 0 0 2 4 6 8 10 Collector-emitter voltage VCE (V) VCE (sat) – IC 3 Common emitter IC/IB = 5 1 0.5 0.3 Tc = 100°C 0.1 0.05 25 −55 0.02 0.003 0.01 0.03 0.1 0.3 1 Collector current IC (A) 3 10 Base-emitter saturation voltage VBE (sat) (V) DC current gain hFE 2SC3307 hFE – IC 500 300 Common emitter VCE = 5 V 100 50 Tc = 100°C 30 25 10 −55 5 3 1 0.003 0.01 0.03 0.1 0.3 1 Collector current IC (A) 3 10 VBE (sat) – IC 10 Common emitter 5 IC/IB = 5 3 1 Tc = −55°C 0.5 0.3 100 25 0.1 0.05 0.03 0.003 0.01 0.03 0.1 0.3 1 Collector current IC (A) 3 10 Collector-emitter saturation voltage VCE (sat) (V) Collector current IC (A) 10 Common emitter VCE = 5 V 8 IC – VBE 6 Ta = 100°C 4 25 2 −55 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Base-emitter voltage VBE (V) Switching time (μs) 30 10 5 3 1 0.5 0.3 0.1 0 Switching Characteristics IC = 10IB1 3IB1 = IB2 Pulse width = 20 μs Duty cycle ≤ 1% Tc = 100°C 25 100 tstg tr tf 25 2468 Collector current IC (A) 10 3 http://store.iiic.cc/ 2009-07-17 2SC3307 Transient thermal resistance rth (°C/W) rth – tw 100 Curves should be applied to the thermally limited region. (single nonrepetitive pulse) 30 (1) Infinite heat sink (2) No heat sink 10 3 1 0.3 0.1 0.03 0.001 0.01 0.1 1 10 Pulse width tw (s) Safe Operating Area 30 IC max (pulsed)* 10 IC max 5 (continuous) 3 500 μs* 10 μs* 100 μs* 1 ms* 13 0.5 10 ms* 0.3 30 ms* 100 ms* 0.1 0.05 0.03 *: Single nonrepetitive pulse Tc = 25°C Curves must be derated linearly with increase in DC operation Tc = 25°C temperature. 0.01 3 10 30 VCEO max 100 300 1000 Collector-emitter voltage VCE (V) (2) (1) 100 1000 Collector current IC (A) 4 http://store.iiic.cc/ 2009-07-17 2SC3307 RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice. • This document and any informa.


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