Document
TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SC3307
2SC3307
High-Speed and High-Voltage Switching Applications Switching Regulator Applications High-Speed DC-DC Converter Applications
Industrial Applications Unit: mm
• Excellent switching times: tr = 1.0 μs (max), tf = 1.0 μs (max) (IC = 5 A)
• High collector breakdown voltage: VCEO = 800 V
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC Pulse
Base current
Collector power dissipation (Tc = 25°C)
Junction temperature
Storage temperature range
VCBO VCEO VEBO
IC ICP IB
PC
Tj Tstg
900 800
7 10 15 3
150
150 −55 to 150
V V V
A
A W °C °C
JEDEC
―
JEITA
―
TOSHIBA
2-21F1A
Weight: 9.75 g (typ.)
Note1: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
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Electrical Characteristics (Ta = 25°C)
2SC3307
Characteristics Collector cut-off current Emitter cut-off current Collector-base breakdown voltage Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage
Rise time
Switching time Storage time
Fall time
Symbol
Test Condition
Min
ICBO IEBO V (BR) CBO V (BR) CEO hFE (1) hFE (2) VCE (sat) VBE (sat)
VCB = 800 V, IE = 0 VEB = 7 V, IC = 0 IC = 1 mA, IE = 0 IC = 10 mA, IB = 0 VCE = 5 V, IC = 10 mA VCE = 5 V, IC = 5 A IC = 5 A, IB = 1 A IC = 5 A, IB = 1 A
― ― 900 800 10 10 ― ―
tr
20 μs
Input
IC = IB1
5
A
Output
―
Typ.
― ― ― ― ― ― ― ―
―
Max
100 1 ― ― ― ― 1 1.5
1
Unit μA mA V V
V V
IB1 IB2
80 Ω
tstg IB2 ― ― 3 μs VCC ≈ 400 V
tf IB1 = 0.5A , I B2 = 1.5 A, duty cycle ≤ 1%
――
1
Marking
TOSHIBA
2SC3307
JAPAN
Part No. (or abbreviation code)
Lot No. Note2
Note2: A line under a Lot No. identifies the indication of product Labels. Not underlined: [[Pb]]/INCLUDES > MCV Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment.
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Collector current IC (A)
IC – VCE
12 Common emitter
2 1.6 10 1.4
Tc = 25°C
1.2
1.0 8 0.8
0.6 6
0.4
4 0.2
IB = 0.1 A 2
0 0
0 2 4 6 8 10
Collector-emitter voltage VCE (V)
VCE (sat) – IC
3 Common emitter IC/IB = 5
1
0.5
0.3 Tc = 100°C
0.1 0.05
25 −55
0.02 0.003 0.01 0.03 0.1 0.3
1
Collector current IC (A)
3
10
Base-emitter saturation voltage VBE (sat) (V)
DC current gain hFE
2SC3307
hFE – IC
500 300 Common emitter
VCE = 5 V 100
50 Tc = 100°C 30
25 10 −55
5 3
1 0.003 0.01 0.03 0.1 0.3
1
Collector current IC (A)
3
10
VBE (sat) – IC
10 Common emitter
5 IC/IB = 5 3
1 Tc = −55°C
0.5 0.3 100 25
0.1
0.05 0.03
0.003 0.01 0.03 0.1 0.3
1
Collector current IC (A)
3
10
Collector-emitter saturation voltage VCE (sat) (V)
Collector current IC (A)
10 Common emitter
VCE = 5 V 8
IC – VBE
6 Ta = 100°C
4 25
2 −55
0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
Base-emitter voltage VBE (V)
Switching time (μs)
30
10 5 3
1 0.5 0.3
0.1 0
Switching Characteristics
IC = 10IB1 3IB1 = IB2 Pulse width = 20 μs
Duty cycle ≤ 1%
Tc = 100°C 25 100
tstg tr tf
25
2468
Collector current IC (A)
10
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2SC3307
Transient thermal resistance rth (°C/W)
rth – tw
100 Curves should be applied to the thermally limited
region. (single nonrepetitive pulse) 30 (1) Infinite heat sink
(2) No heat sink 10
3 1
0.3 0.1
0.03 0.001
0.01
0.1 1 10
Pulse width tw (s)
Safe Operating Area
30 IC max (pulsed)*
10 IC max
5 (continuous)
3 500 μs*
10 μs* 100 μs*
1 ms* 13 0.5 10 ms* 0.3 30 ms*
100 ms*
0.1
0.05 0.03
*: Single nonrepetitive pulse Tc = 25°C
Curves must be derated linearly with increase in
DC operation Tc = 25°C
temperature.
0.01 3
10
30
VCEO max 100 300 1000
Collector-emitter voltage VCE (V)
(2) (1) 100 1000
Collector current IC (A)
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2SC3307
RESTRICTIONS ON PRODUCT USE
• Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice.
• This document and any informa.