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2SC3279

Toshiba Semiconductor
Part Number 2SC3279
Manufacturer Toshiba Semiconductor
Description NPN TRANSISTOR
Published Mar 22, 2005
Detailed Description 2SC3279 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3279 Strobe Flash Applications Medium Power Ampl...
Datasheet PDF File 2SC3279 PDF File

2SC3279
2SC3279

Overview
2SC3279 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3279 Strobe Flash Applications Medium Power Amplifier Applications · High DC current gain and excellent hFE linearity : hFE (1) = 140~600 (VCE = 1 V, IC = 0.
5 A) : hFE (2) = 70 (min), 200 (typ.
) (VCE = 1 V, IC = 2 A) · Low saturation voltage: VCE (sat) = 0.
5 V (max) (IC = 2 A, IB = 50 mA) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage DC Collector current Pulsed (Note 1) Base current Collector power dissipation Junction temperature Storage temperature range ICP IB PC Tj Tstg 5 0.
2 750 150 -55~150 A mW °C °C Symbol VCBO VCES VCEO VEBO IC Rating 3...


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