2SC3265

2SC3265 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3265 Low Frequency Power Amplifier Applications Power Switching Applications High DC current gain: hFE (1) = 100 to 320 Low saturation voltage: VCE (sat) = 0.4 V (max) (IC = 500 mA, IB = 20 mA) Complementary to 2SA1298 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range VCBO VCEO VEBO IC IB PC Tj Tstg 30 25 5 800 160 200 150 −55 to 150 V V V mA mA mW °C °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in JEDEC TO-236MOD temperature, etc.) may cause this product to decrease in the JEITA SC-59 reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the TOSHIBA 2-3F1A absolute maximum ratings. Please design the appropriate reliability upon reviewing the Weight: 0.012 g (typ.) Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage ...