IXFT18N100Q3

www.DataSheet.co.kr Advance Technical Information HiperFETTM Power MOSFETs Q3-Class N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier IXFT18N100Q3 IXFH18N100Q3 VDSS ID25 RDS(on) = 1000V = 18A ≤ 660mΩ TO-268 (IXFT) G S D (Tab) V V V V A A A J V/ns W °C °C °C °C °C Nm/lb.in. g g z z z z z Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL Tsold Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C Maximum Ratings 1000 1000 ± 30 ± 40 18 60 18 1.5 50 830 -55 ... +150 150 -55 ... +150 TO-247 (IXFH) G D S D (Tab) D = Drain Tab = Drain G = Gate S = Source Features Low Intrinsic Gate Resistance International Standard Packages Low Package Inductance Fast Intrinsic Rectifier Low RDS(on) and QG 1.6mm (0.062in.) from Case for 10s Plastic Body for 10 seconds Mounting Torque (TO-247) TO-268 TO-247 300 260 1.13 / 10 4.0 6.0 Advantages z z Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 1mA VDS = VGS, ID = 4mA VGS = ±30V, VDS = 0V VDS = VDSS, VGS = 0V TJ = 125°C Characteristic Values Min. Typ. Max. 1000 3.5 6.5 ±100 V V nA z High Power Density Easy to Mount Space Savings Applications z z z 25 μA 1.25 mA 660 mΩ z z VGS = 10V, ID = 0.5 ID25, Note 1 DC-DC Converters Battery Chargers Switch-Mode and Resonant-Mode Power Sup...