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IXFB62N80Q3

IXYS Corporation
Part Number IXFB62N80Q3
Manufacturer IXYS Corporation
Description Power MOSFET
Published Feb 22, 2012
Detailed Description Q3-Class HiperFETTM Power MOSFET N-Channel Enhancement Mode Fast Intrinsic Rectifier Avalanche Rated IXFB62N80Q3 D G S ...
Datasheet PDF File IXFB62N80Q3 PDF File

IXFB62N80Q3
IXFB62N80Q3

Overview
Q3-Class HiperFETTM Power MOSFET N-Channel Enhancement Mode Fast Intrinsic Rectifier Avalanche Rated IXFB62N80Q3 D G S Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD FC Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient Maximum Ratings 800 V 800 V 30 V 40 V TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150C TC = 25C 62 180 62 5 50 1560 -55 .
.
.
+150 150 -55 .
.
.
+150 A A A J V/ns W C C C Maximum Lead Temperature for Soldering 300 °C 1.
6 mm (0.
062in.
) from Case for 10s 260 °C Mounting Force 30.
.
120/6.
7.
.
27 N/lb.
10 g VDSS = ID25 =  RDS(on) tr...


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