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FCH20N60 / FCA20N60 600V N-Channel MOSFET
SuperFET
FCH20N60 / FCA20N60
600V N-Channel MOSFET Features
• 650V @TJ = 150°C • Typ. RDS(on) = 0.15Ω • Ultra low gate charge (typ. Qg = 75nC) • Low effective output capacitance (typ. Coss.eff = 165pF) • 100% avalanche tested
TM
Description
SuperFETTM is, Farichild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFET is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.
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TO-247
G DS
TO-3P
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S
Absolute Maximum Ratings
Symbol
VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current Gate-Source voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C) - Derate above 25°C
(Note 2) (Note 1) (Note 1) (Note 3)
Parameter
- Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed
(Note 1)
FCH20N60
600
FCA20N60
Unit
V A A A V mJ A mJ V/ns W W/°C °C °C
20 12.5 60 ± 30 690 20 20.8 4.5 208 1.67 -55 to +150 300
Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds
Thermal Characteristics
Symbol
RθJC RθCS RθJA
Parameter
Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Thermal Resistance, Junction-to-Ambient
Typ.
-0.24 --
Max.
0.6 -41.7
Unit
°C/W °C/W
©2005 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
FCH20N60 / FCA20N60 Rev. A
Datasheet pdf - http://www.DataSheet4U.net/
www.DataSheet.co.kr
FCH20N60 / FCA20N60 600V N-Channel MOSFET
Package Marking and Ordering Information
Device Marking
FCH20N60 FCA20N60
Device
FCH20N60 FCA20N60
Package
TO-247 TO-3P
Reel Size
-
Tape Width
-
Quantity
30 30
Electrical Characteristics
Symbol
Off Characteristics BVDSS ∆BVDSS / ∆TJ BVDS IDSS IGSSF IGSSR VGS(th) RDS(on) gFS Ciss Coss Crss Coss Coss eff. td(on) tr td(off) tf Qg Qgs Qgd IS ISM VSD trr Qrr
Notes:
TC = 25°C unless otherwise noted
Parameter
Drain-Source Breakdown Voltage
Conditions
VGS = 0V, ID = 250µA, TJ = 25°C VGS = 0V, ID = 250µA, TJ = 150°C
Min
600 --------
Typ
-650 0.6 700 -----
Max Units
----1 10 100 -100 V V V/°C V µA µA nA nA
Breakdown Voltage Temperature Coefficient Drain-Source Avalanche Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse
ID = 250µA, Referenced to 25°C VGS = 0V, ID = 20A VDS = 600V, VGS = 0V VDS = 480V, TC = 125°C VGS = 30V, VDS = 0V VGS = -30V, VDS = 0V VDS = VGS, ID = 250µA VGS = 10V, ID = 10A VDS = 40V, ID = 10A VDS = 25V, VGS = 0V, f = 1.0MHz
(Note 4)
On Characteristics Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance 3.0 ---0.15 17 5.0 0.19 -V Ω S
Dynamic Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Effective Output Capacitance VDS = 480V, VGS = 0V, f = 1.0MHz VDS = 0V to 400V, VGS = 0V VDD = 300V, ID = 20A RG = 25Ω -----2370 1280 95 65 165 3080 1665 -85 -pF pF pF pF pF
Switching Characteristics Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS = 480V, ID = 20A VGS = 10V
(Note 4, 5) (Note 4, 5)
--------
62 140 230 65 75 13.5 36
135 290 470 140 98 18 --
ns ns ns ns nC nC nC
Drain-Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, IS = 20A VGS = 0V, IS = 20A dIF/dt =100A/µs
(Note 4)
------
---530 10.5
20 60 1.4 ---
A A V ns µC
1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. IAS = 20A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 3. ISD ≤ 20A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2% 5. Essentially Independent of Operating Temperature Typical Characteristics
2 FCH20N60 / FCA20N60 Rev. A
www.fairchildsemi.com
Datasheet pdf - http://www.DataSheet4U.net/
www.DataSheet.co.kr
FCH20N60 / FCA20N60 600V N-Channel MOSFET
Typical Performance Characteristics
Figure 1. On-Region Characteristics
10
2
Figure 2. Transfer Characteristics
10
2
VGS Top : 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V
ID, Drain Current [A]
ID , Drain Current [A]
10
1
10
1
150°C
25°C -55°C 10
0
10
0
Notes : 1. 250µs Pulse Test 2. TC = 25°C
Note 1. VDS = 40V 2. 250µs Pulse Test
10
-1
10
0
10
1
2
4
6
8
10
VDS, Drain-Source Voltage [V]
VGS ,.