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FCH20N60 Dataheets PDF



Part Number FCH20N60
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description N-Channel MOSFET
Datasheet FCH20N60 DatasheetFCH20N60 Datasheet (PDF)

www.DataSheet.co.kr FCH20N60 / FCA20N60 600V N-Channel MOSFET SuperFET FCH20N60 / FCA20N60 600V N-Channel MOSFET Features • 650V @TJ = 150°C • Typ. RDS(on) = 0.15Ω • Ultra low gate charge (typ. Qg = 75nC) • Low effective output capacitance (typ. Coss.eff = 165pF) • 100% avalanche tested TM Description SuperFETTM is, Farichild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate char.

  FCH20N60   FCH20N60


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www.DataSheet.co.kr FCH20N60 / FCA20N60 600V N-Channel MOSFET SuperFET FCH20N60 / FCA20N60 600V N-Channel MOSFET Features • 650V @TJ = 150°C • Typ. RDS(on) = 0.15Ω • Ultra low gate charge (typ. Qg = 75nC) • Low effective output capacitance (typ. Coss.eff = 165pF) • 100% avalanche tested TM Description SuperFETTM is, Farichild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFET is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency. D ! " G! G D S ! " " " TO-247 G DS TO-3P ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current Gate-Source voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C) - Derate above 25°C (Note 2) (Note 1) (Note 1) (Note 3) Parameter - Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed (Note 1) FCH20N60 600 FCA20N60 Unit V A A A V mJ A mJ V/ns W W/°C °C °C 20 12.5 60 ± 30 690 20 20.8 4.5 208 1.67 -55 to +150 300 Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds Thermal Characteristics Symbol RθJC RθCS RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Thermal Resistance, Junction-to-Ambient Typ. -0.24 -- Max. 0.6 -41.7 Unit °C/W °C/W ©2005 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FCH20N60 / FCA20N60 Rev. A Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr FCH20N60 / FCA20N60 600V N-Channel MOSFET Package Marking and Ordering Information Device Marking FCH20N60 FCA20N60 Device FCH20N60 FCA20N60 Package TO-247 TO-3P Reel Size - Tape Width - Quantity 30 30 Electrical Characteristics Symbol Off Characteristics BVDSS ∆BVDSS / ∆TJ BVDS IDSS IGSSF IGSSR VGS(th) RDS(on) gFS Ciss Coss Crss Coss Coss eff. td(on) tr td(off) tf Qg Qgs Qgd IS ISM VSD trr Qrr Notes: TC = 25°C unless otherwise noted Parameter Drain-Source Breakdown Voltage Conditions VGS = 0V, ID = 250µA, TJ = 25°C VGS = 0V, ID = 250µA, TJ = 150°C Min 600 -------- Typ -650 0.6 700 ----- Max Units ----1 10 100 -100 V V V/°C V µA µA nA nA Breakdown Voltage Temperature Coefficient Drain-Source Avalanche Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse ID = 250µA, Referenced to 25°C VGS = 0V, ID = 20A VDS = 600V, VGS = 0V VDS = 480V, TC = 125°C VGS = 30V, VDS = 0V VGS = -30V, VDS = 0V VDS = VGS, ID = 250µA VGS = 10V, ID = 10A VDS = 40V, ID = 10A VDS = 25V, VGS = 0V, f = 1.0MHz (Note 4) On Characteristics Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance 3.0 ---0.15 17 5.0 0.19 -V Ω S Dynamic Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Effective Output Capacitance VDS = 480V, VGS = 0V, f = 1.0MHz VDS = 0V to 400V, VGS = 0V VDD = 300V, ID = 20A RG = 25Ω -----2370 1280 95 65 165 3080 1665 -85 -pF pF pF pF pF Switching Characteristics Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS = 480V, ID = 20A VGS = 10V (Note 4, 5) (Note 4, 5) -------- 62 140 230 65 75 13.5 36 135 290 470 140 98 18 -- ns ns ns ns nC nC nC Drain-Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, IS = 20A VGS = 0V, IS = 20A dIF/dt =100A/µs (Note 4) ------ ---530 10.5 20 60 1.4 --- A A V ns µC 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. IAS = 20A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 3. ISD ≤ 20A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2% 5. Essentially Independent of Operating Temperature Typical Characteristics 2 FCH20N60 / FCA20N60 Rev. A www.fairchildsemi.com Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr FCH20N60 / FCA20N60 600V N-Channel MOSFET Typical Performance Characteristics Figure 1. On-Region Characteristics 10 2 Figure 2. Transfer Characteristics 10 2 VGS Top : 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V ID, Drain Current [A] ID , Drain Current [A] 10 1 10 1 150°C 25°C -55°C 10 0 10 0 Notes : 1. 250µs Pulse Test 2. TC = 25°C Note 1. VDS = 40V 2. 250µs Pulse Test 10 -1 10 0 10 1 2 4 6 8 10 VDS, Drain-Source Voltage [V] VGS ,.


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