FCH47N60N

www.DataSheet.co.kr FCH47N60N 600V N-Channel MOSFET SupreMOS FCH47N60N N-Channel MOSFET 600V, 47A, 62mΩ Features 650V @TJ = 150 C RDS(on) = 51.5mΩ ( Typ.)@ VGS = 10V, ID =23.5 A Ultra Low Gate Charge ( Typ.Qg =115nC) Low Effective Output Capacitance 100% Avalanche Tested RoHS Compliant o December 2011 TM Description The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it from preceding multi-epi based technologies. By utilizing this advanced technology and precise process control, SupreMOS provides world class Rsp, superior switching performance and ruggedness. This SupreMOS MOSFET fits the industry’s AC-DC SMPS requirements for PFC, server/telecom power, FPD TV power, ATX power, and industrial power applications. D G G D S TO-247 S MOSFET Maximum Ratings TC = 25oC unless otherwise noted Symbol VDSS VGSS ID IDM EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy MOSFET dv/dt Ruggedness Peak Diode Recovery dv/dt Power Dissipation (TC = 25oC) - Derate above 25oC (Note 3) -Continuous (TC = 25oC) -Continuous (TC = 100oC) - Pulsed (Note 1) (Note 2) Ratings 600 ±30 47 29.7 141 3068 15.7 3.7 100 20 368 2.94 -55 to +150 300 Units V V A A mJ A mJ V/ns V/ns W W/oC o o Operating and Storage Temperature Range Maximum Lead Temperature ...