FCA36N60NF

FCA36N60NF — N-Channel SupreMOS® FRFET® MOSFET FCA36N60NF N-Channel SupreMOS® FRFET® MOSFET 600 V, 34.9 A, 95 mΩ May 2014 Features RDS(on) = 80 mΩ (Typ.) @ VGS = 10V, ID = 18 A Ultra Low Gate Charge (Typ. Qg = 86 nC) Low Effective Output Capacitance (Typ. Coss(eff.) = 338 pF) 100% Avalanche Tested RoHS Compliant Application Solar Inverter AC-DC Power Supply Description The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp on-resistance, superior switching performance and ruggedness. SupreMOS MOSFET is suitable for high frequency switching power converter applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. SupreMOS FRFET® MOSFET’s optimized body diode reverse recovery performance can remove additional component and improve system reliability. D G D S TO-3PN G S MOSFET Maximum Ratings TC = 25oC unless otherwise noted. Symbol VDSS VGSS ID IDM EAS IAR EAR dv/dt PD Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current Continuous (TC = 25oC) Continuous (TC = 100oC) Pulsed Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy MOSFET dv/dt Peak Diode Recovery dv/dt Power Dissipation (TC = 25oC) Derate Above 25oC (Note...