IPD082N10N3G

www.DataSheet.co.kr IPP086N10N3 G IPB083N10N3 G IPI086N10N3 G IPD082N10N3 G OptiMOS™3 Power-Transistor Features N-channel, normal level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on) 175 °C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target application Product Summary V DS R DS(on),max (TO 252) ID 100 8.2 80 V mΩ A Ideal for high-frequency switching and synchronous rectification Halogen-free according to IEC61249-2-21 * Type IPP086N10N3 G IPI086N10N3 G IPB083N10N3 G IPD082N10N3 G Package Marking PG-TO220-3 086N10N PG-TO262-3 086N10N PG-TO263-3 083N10N PG-TO252-3 082N10N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C2) T C=100 °C Pulsed drain current2) Avalanche energy, single pulse Gate source voltage Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 1) 2) Value 80 58 320 110 ±20 Unit A I D,pulse E AS V GS P tot T j, T stg T C=25 °C I D=73 A, R GS=25 Ω mJ V W °C T C=25 °C 125 -55 ... 175 55/175/56 J-STD20 and JESD22 See figure 3 * Excep D-PAK ( TO-252-3 ) Rev. 2.5 page 1 2010-07-16 Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr IPP086N10N3 G IPB083N10N3 G Parameter Symbol Conditions min. Thermal characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient R thJC R thJA minimal footprint 6 cm2 coo...