P-Channel MOSFET
www.vishay.com
Si8499DB
Vishay Siliconix
P-Channel 20 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) -20
RDS(on) () 0.032 ...
Description
www.vishay.com
Si8499DB
Vishay Siliconix
P-Channel 20 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) -20
RDS(on) () 0.032 at VGS = -4.5 V 0.046 at VGS = -2.5 V 0.065 at VGS = -2.0 V 0.120 at VGS = -1.8 V
ID (A) e -16 -14.3 -12 -2.5
Qg (TYP.) 14.5 nC
MICRO FOOT® 1.5 x 1 S
S2
xxxxxxx
D3 4
1
1 mm
1
1.5 mm
Backside View
6G
5S
D Bump Side View
Marking Code: xxxx = 8499 xxx = Date / lot traceability code
Ordering Information: Si8499DB-T2-E1 (Lead (Pb)-free and halogen-free)
FEATURES TrenchFET® power MOSFET
Ultra-small 1.5 mm x 1 mm maximum outline
Ultra-thin 0.59 mm maximum height Material categorization:
for definitions of compliance please see www.vishay.com/doc?99912
APPLICATIONS
S
Low on-resistance load switch,
charger switch and battery switch
for portable devices
G
- Low power consumption
- Increased battery life
D P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current
TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C
Continuous Source-Drain Diode Current Maximum Power Dissipation Operating Junction and Storage Temperature Range
TC = 25 °C TA = 25 °C TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C
Package Reflow Conditions c
IR/Convection
VDS VGS ID IDM IS
PD TJ, Tstg
LIMIT -20 ± 12 -16 -13.7
-7.8 a, b -6.3 a, b
-20 -10.8 -2.3 a, b
13 8.4 2.77 a, b 1.77 a, b -55 to +150 260
UNIT V
A
W °C
THERMAL ...
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