SI8497DB

www.vishay.com Si8497DB Vishay Siliconix P-Channel 30 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) -30 RDS(on) () MAX. 0.053 at VGS = -4.5 V 0.071 at VGS = -2.5 V 0.120 at VGS = -2 V ID (A) d -13 -11 -5 Qg (TYP.) 16.3 nC MICRO FOOT® 1.5 x 1 S S2 xxxxxxx D3 4 1 1 mm 1 1.5 mm Backside View 6G 5S D Bump Side View Marking Code: xxxx = 8497 xxx = Date / lot traceability code Ordering Information:  Si8497DB-T2-E1 (Lead (Pb)-free and halogen-free) FEATURES TrenchFET® power MOSFET Ultra-small 1.5 mm x 1 mm maximum outline Ultra-thin 0.59 mm maximum height Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS S Low on-resistance load switch, charger switch, OVP switch and battery switch for portable devices G - Low power consumption - Increased battery life - Space savings on PCB D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current (t = 300 μs) TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Continuous Source-Drain Diode Current Maximum Power Dissipation Operating Junction and Storage Temperature Range TC = 25 °C TA = 25 °C TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Package Reflow Conditions c IR/Convection VDS VGS ID IDM IS PD TJ, Tstg LIMIT -30 ± 12 -13 -10 -5.9 a, b -4.7 a, b -20 -11 -2.3 a, b 13 8.4 2.77 a, b 1.77 a, b -55 to 150 260 UNIT V A W...