2SC3142

Ordering number:EN1066A NPN Epitaxial Planar Silicon Transistor 2SC3142 High-Frequency General-Purpose Amplifier Applications Features · FBET series. · Compact package enabling compactness of sets. · High fT and small cre (fT=750MHz typ, cre=0.6 typ). Package Dimensions unit:mm 2018A [2SC3142] Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature VCBO VCEO VEBO IC PC Tj Tstg Electrical Characteristics at Ta = 25˚C Conditions Parameter Symbol Conditions Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Feedback Capacitance Base-to-Collector Time Constant Noise Figure Power Gain ICBO IEBO hFE fT Cre rbb'CC NF PG VCB=10V, IE=0 VEB=3V, IC=0 VCE=6V, IC=1mA VCE=6V, IC=4mA VCB=6V, f=1MHz VCE=6V, IC=1mA, f=31.9MHz VCE=6V, IC=1mA, f=100MHz VCE=6V, IC=1mA, f=100MHz * : The 2SC3142 are classified as follows according to hFE at 1mA : (Note) Marking : J hFE rank : 2, 3, 4 40 2 80 60 3 120 C : Collector B : Base E : Emitter SANYO : CP Ratings 25 20 3 30 150 125 –40 to +125 Unit V V V mA mW ˚C ˚C Ratings min typ 40* 450 750 0.6 2.2 28 max 0.1 0.1 180* 0.9 19 Unit µA µA MHz pF ps dB dB 90 4 180 Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability...