2SC3138
TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process)
2SC3138
High Voltage Amplifier Applications H...
2SC3138
TOSHIBA
Transistor Silicon
NPN Triple Diffused Type (PCT process)
2SC3138
High Voltage Amplifier Applications High Voltage Switching Applications
Unit: mm
High voltage: VCBO = 200 V (max) VCEO = 200 V (max)
Small flat package Complementary to 2SA1255
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range
VCBO VCEO VEBO
IC IB PC Tj Tstg
200
V
200
V
5
V
50
mA
20
mA
150
mW
125
°C
−55 to 125
°C
JEDEC JEITA TOSHIBA
TO-236MOD SC-59 2-3F1A
Note: Using continuously under heavy loads (e.g. the application of high
Weight: 0.012 g (typ.)
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Start of commercial production
1982-10
1
2014-03-01
2SC3138
Electrical Characteristics (Ta = 25°C)
Characteristics Collector cut-off current Emitter cut-off current Collector-base breakdown vo...