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2SC3122
Silicon NPN Transistor
Description
TOSHIBA
Transistor
Silicon
NPN
Epitaxial Planar Type 2SC3122 2SC3122 TV VHF RF Amplifier Applications Unit: mm · High gain: Gpe = 24dB (typ.) (f = 200 MHz) · Low noise: NF = 2.0dB (typ.) (f = 200 MHz) · Excellent forward AGC characteristics Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage...
Toshiba Semiconductor
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