SUP53P06-20

www.DataSheet.co.kr New Product SUP53P06-20 Vishay Siliconix P-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) - 60 RDS(on) (Ω) 0.0195 at VGS = - 10 V 0.025 at VGS = - 4.5 V TO-220AB FEATURES ID (A)a - 53 - 42 Qg (Typ.) 76 nC TrenchFET® Power MOSFET 100 % UIS Tested RoHS COMPLIANT APPLICATIONS Load Switch S G DRAIN connected to TAB G D S Top View Ordering Information: SUP53P06-20-E3 (Lead (Pb)-free) D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C TA = 70 °C Pulsed Drain Current Avalanche Current Pulse Single Pulse Avalanche Energy Continuous Source-Drain Diode Current L = 0.1 mH TC = 25 °C TA = 25 °C TC = 25 °C Maximum Power Dissipation TC = 70 °C TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range TJ, Tstg PD IDM IAS EAS IS ID Symbol VDS VGS Limit - 60 ± 20 - 53a - 46.8 9.2b - 8.1b - 150 - 45 101 69 a Unit V A mJ A 2.1b 104.2a 66.7a 3.1b 2.0b - 55 to 150 W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb Maximum Junction-to-Case Notes: a. Based on TC = 25 °C. b. Surface Mounted on 1" x 1" FR4 board. Steady State Steady State Symbol RthJA RthJC Typical 33 0.98 Maximum 40 1.2 Unit °C/W Document Number: 68633 S-80897-Rev. A, 21-Apr-08 www.vishay.com 1 Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr New Product SUP53P06-20 Vishay Siliconix SP...