SUP50N03-5M1P

www.DataSheet.co.kr SUP50N03-5m1P Vishay Siliconix N-Channel 30 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) 0.0051 at VGS = 10 V 0.0063 at VGS = 4.5 V ID (A) 50d 50d Qg (Typ.) 21.7 FEATURES Halogen-free According to IEC 61249-2-21 Definition TrenchFET® Power MOSFET 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS TO-220AB Power Supply - Secondary Synchronous Rectification DC/DC Converter D G G D S Top View Ordering Information: SUP50N03-5m1P-GE3 (Lead (Pb)-free and Halogen-free) S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current Avalanche Current Single Avalanche Energy a Symbol VDS VGS TC = 25 °C TC = 70 °C ID IDM IAS L = 0.1 mH TC = 25 °C TA = 25 °Cc EAS PD TJ, Tstg Limit 30 ± 20 50d 50d 100 40 80 59.5 2.7 - 55 to 150 b Unit V A mJ W °C Maximum Power Dissipationa Operating Junction and Storage Temperature Range THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient (PCB Mount) Junction-to-Case (Drain) Notes: a. Duty cycle ≤ 1 %. b. See SOA curve for voltage derating. c. When mounted on 1" square PCB (FR-4 material). d. Package limited. c Symbol RthJA RthJC Limit 46 2.1 Unit °C/W Document Number: 66570 S10-1050-Rev. A, 03-May-10 www.vishay.com 1 Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr SUP50N03-5m1P Vishay Siliconix SPECIFICATIONS TJ = 25 °C, ...