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Final data
SPP04N60C3, SPB04N60C3 SPA04N60C3
VDS @ Tjmax RDS(on) ID 650 0.95 4.5 V Ω A
Cool MOS™ ...
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Final data
SPP04N60C3, SPB04N60C3 SPA04N60C3
VDS @ Tjmax RDS(on) ID 650 0.95 4.5 V Ω A
Cool MOS™ Power
Transistor
Feature New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated High peak current capability Improved transconductance
P-TO220-3-31 1 2 3
P-TO220-3-31
P-TO263-3-2
P-TO220-3-1
P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)
Type SPP04N60C3 SPB04N60C3 SPA04N60C3
Package P-TO220-3-1 P-TO263-3-2
Ordering Code Q67040-S4366 Q67040-S4407
Marking 04N60C3 04N60C3 04N60C3
P-TO220-3-31 Q67040-S4413
Maximum Ratings Parameter Continuous drain current
TC = 25 °C TC = 100 °C
Symbol ID 4.5 2.8 ID puls EAS EAR IAR VGS VGS Ptot Tj , Tstg 13.5 130 0.4 4.5 ±20 ±30 50
Value SPP_B SPA
Unit A 4.51) 2.81) 13.5 130 0.4 4.5 ±20 ±30 31 W °C A V A mJ
Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse
ID=3.4, VDD=50V
Avalanche energy, repetitive tAR limited by Tjmax2)
ID=4.5A, VDD =50V
Avalanche current, repetitive tAR limited by Tjmax Gate source voltage static Gate source voltage AC (f >1Hz) Power dissipation, TC = 25°C Operating and storage temperature
-55...+150
Page 1
2003-10-02
Datasheet pdf - http://www.DataSheet4U.net/
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Final data Maximum Ratings Parameter Drain Source voltage slope
V DS = 480 V, I D = 4.5 A, Tj = 125 °C
SPP04N60C3, SPB04N60C3 SPA04N60C3
Symbol dv/dt
Value 50
Unit V/ns
Thermal Characteristics Parameter ...