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RT3P66U Dataheets PDF



Part Number RT3P66U
Manufacturers Isahaya Electronics
Logo Isahaya Electronics
Description Composite Transistor
Datasheet RT3P66U DatasheetRT3P66U Datasheet (PDF)

www.DataSheet.co.kr PRELIMINARY RT3P66U Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type DESCRIPTION RT3P66U is a composite transistor built with two RT1P430 in USM6F package. OUTLINE DRAWING 1.6 ±0.05 1pin マーク 1.2 ±0.05 Unit:mm FEATURE Silicon epitaxial type Each transistor elements are independent. Mini package for easy mounting 1.6 ±0.05 1. 0 0.5 0.5 (0.5) 6 1 (0.95) 2 (0.5) 5 0.2 ±0.05 APPLICATION Inverted circuit, switching circuit, interface .

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www.DataSheet.co.kr PRELIMINARY RT3P66U Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type DESCRIPTION RT3P66U is a composite transistor built with two RT1P430 in USM6F package. OUTLINE DRAWING 1.6 ±0.05 1pin マーク 1.2 ±0.05 Unit:mm FEATURE Silicon epitaxial type Each transistor elements are independent. Mini package for easy mounting 1.6 ±0.05 1. 0 0.5 0.5 (0.5) 6 1 (0.95) 2 (0.5) 5 0.2 ±0.05 APPLICATION Inverted circuit, switching circuit, interface circuit, driver circuit 3 (Φ0.1 ~0.2) 4 ※ 0.5 ±0.05 0.12 ±0.05 ⑥ RTr ⑤ R1 ④ RTr ① R1 ② ③ TERMINAL CONNECTOR ①:EMITTER1 ②:BASE1 ③:COLLECTOR2 ④:EMITTER2 ⑤:BASE2 ⑥:COLLECTOR1 JEITA:- ISAHAYA:USM6F MAXIMUM RATING (Ta=25℃) SYMBOL VCBO VEBO VCEO IC ICM PC Tj Tstg PARAMETER Collector to Base voltage Emitter to Base voltage Collector to Emitter voltage Collector current Peak Collector current Collector dissipation(Total, Ta=25℃) Junction temperature Storage temperature RATING -50 -6 -50 -100 -200 125 +150 -55~+150 UNIT V V V mA mA mW ℃ ℃ 1 2 3 6 5 4 MARKING 66 ISAHAYA ELECTRONICS CORPORATION Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr RT3P66U Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type ELECTRICAL CHARACTERISTICS (Ta=25℃) Symbol V(BR)CEO ICBO hFE VCE(sat) R1 fT Parameter Collector to Emitter break down voltage Collector cut off current DC forward current gain Collector to Emitter saturation voltage Input resistor Gain band width product (Tr1,Tr2 common) Test conditions Limits Min -50 -0.1 100 -0.1 3.3 4.7 150 -0.3 6.1 Typ Max Unit V μA V kΩ MHZ I C=-100μA,RBE=∞ VCB=-50V,I E =0 VCE=-5V,I C=-1mA I C=-10mA,I B=-0.5mA VCE=-6V,I E=10mA TYPICAL CHARACTERISTICS Input on voltage-Collector CUrrent -10 (Tr1,Tr2 common) DC forward current gain -Collector CUrrent 1000 DC forward current gain hFE Input on voltage VI(ON) (V) VCE=-0.2V VCE=-5V -1 100 -0.1 -0.1 -1 -10 -100 10 -0.1 -1 -10 -100 Collector CUrrent Ic (mA) Collector CUrrent Ic(mA) Collector Current-Input off voltage -1000 Collector CUrrent Ic (uA) VCE=-5V -100 -10 -0 -0.2 -0.4 -0.6 -0.8 -1 -1.2 -1.4 -1.6 -1.8 -2 Input off voltage VI(OFF) (V) ISAHAYA ELECTRONICS CORPORATION Datasheet pdf - http://www.DataSheet4U.net/ w w w D .a a tS h e e c . t o k .r Marketing division, Marketing planning department 6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan Keep safety first in your circuit designs! ·ISAHAYA Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (1) placement of substitutive, auxiliary, (2) use of non-farmable material or (3) prevention against any malfunction or mishap. Notes regarding these m.


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