SI4666DY

www.DataSheet.co.kr Si4666DY Vishay Siliconix N-Channel 25 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 25 RDS(on) (Ω) 0.010 at VGS = 10 V 0.011 at VGS = 4.5 V 0.014 at VGS = 2.5 V ID (A)a 16.5 15.8 14 10.7 nC Qg (Typ.) FEATURES Halogen-free According to IEC 61249-2-21 Definition TrenchFET® Power MOSFET 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Synchronous Buck Converter DC/DC Converter SO-8 S S S G 1 2 3 4 Top View S Ordering Information: Si4666DY-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET 8 7 6 5 D D D G D D ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C TA = 70 °C Pulsed Drain Current Continuous Source-Drain Diode Current Single Pulse Avalanche Current Avalanche Energy TC = 25 °C TA = 25 °C L = 0.1 mH TC = 25 °C Maximum Power Dissipation TC = 70 °C TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range TJ, Tstg PD IDM IS IAS EAS ID Symbol VDS VGS Limit 25 ± 12 16.5 9.3 11.5b,c 9.4b,c 40 4.5 2.3b,c 15 11.25 5 3.2 2.50b,c 1.6b,c - 55 to 150 °C W mJ A Unit V THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient b, d Symbol t ≤ 10 s Steady State RthJA RthJF Typical 38 20 Maximum 50 25 Unit °C/W Maximum Junction-to-Foot (Drain) Notes: a. Based on TC = 25 °C. b. Surface mounted on 1" x 1" FR4 board. c. t = 10 s. d. Maximum under steady state conditions i...