SI4630DY

www.DataSheet.co.kr Si4630DY Vishay Siliconix N-Channel 25-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 25 RDS(on) (Ω) 0.0027 at VGS = 10 V 0.0032 at VGS = 4.5 V ID (A)a 36 29 Qg (Typ) 49 nC FEATURES Halogen-free According to IEC 61249-2-21 Available TrenchFET® Power MOSFET 100 % Rg Tested APPLICATIONS Synchronous Buck - Low Side - Notebook - Server - Workstation Synchronous Rectifier - POL D S S S G 1 2 3 4 Top View S Ordering Information: Si4630DY-T1-E3 (Lead (Pb)-free) Si4630DY-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET 8 7 6 5 D D D D G SO-8 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TA = 25 °C L = 0.1 mH TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Symbol VDS VGS Limit 25 ± 16 40 32 27b, c 21b, c 70 7.0 3.0b, c 30 45 7.8 5.0 3.5b, c 2.2b, c - 55 to 150 Unit V Continuous Drain Current (TJ = 150 °C) ID Pulsed Drain Current Continuous Source-Drain Diode Current Single Pulse Avalanche Current Avalanche Energy IDM IS IAS EAS A mJ Maximum Power Dissipation PD W Operating Junction and Storage Temperature Range TJ, Tstg THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, d Maximum Junction-to-Foot (Drain) Notes: a. Based on TC = 25 °C. b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 s. d. Maximum under Steady State conditions is 80 °C/W. Document Number: 73685 S09-0138-Rev. C, 02-Feb-09 www.vishay.com 1 ...