SI4714DY

www.DataSheet.co.kr New Product Si4714DY Vishay Siliconix N-Channel 30 V (D-S) MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () 0.0135 at VGS = 10 V 0.0175 at VGS = 4.5 V ID (A)a 13.6 7.3 nC 12.0 Qg (Typ.) Halogen-free According to IEC 61249-2-21 Definition SkyFET Monolithic TrenchFET Gen.  Power MOSFET and Schottky Diode 100 % Rg Tested 100 % UIS Tested Compliant to RoHS Directive 2002/95/EC SO-8 S S S G 1 2 3 4 Top View 8 7 6 5 D D D D APPLICATIONS Notebook PC - System Power, Memory Buck Converter Synchronous Rectifier Switch D G Schottky Diode Ordering Information: Si4714DY-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET S ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C TA = 70 °C Pulsed Drain Current (t = 300 µs) Continuous Source-Drain Diode Current Single Pulse Avalanche Current Single Pulse Avalanche Energy TC = 25 °C TA = 25 °C L = 0.1 mH TC = 25 °C Maximum Power Dissipation TC = 70 °C TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range TJ, Tstg PD IDM IS IAS EAS ID Symbol VDS VGS Limit 30 ± 20 13.6 10.7 10.1b, c 8.1b, c 50 3.8 2.1b, c 15 11.25 4.5 2.8 2.5b, c 1.6b, c - 55 to 150 W mJ A Unit V °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, d Maximum Junction-to-Foot (Drain) t  10 s Steady State Symbol RthJA RthJF Typ. 38...