SI4712DY

www.DataSheet.co.kr New Product Si4712DY Vishay Siliconix N-Channel 30-V (D-S) MOSFET with Schottky Diode PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) 0.013 at VGS = 10 V 0.0165 at VGS = 4.5 V ID (A)a 14.6 12.9 Qg (Typ.) 8.3 nC FEATURES Halogen-free According to IEC 61249-2-21 Definition SkyFET® Monolithic TrenchFET® Power MOSFET and Schottky Diode 100 % Rg Tested 100 % UIS Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS SO-8 S S S G 1 2 3 4 Top View Ordering Information: Si4712DY-T1-GE3 (Lead (Pb)-free and Halogen-free) 8 7 6 5 D D D D G N-Channel MOSFET S Schottky Diode Notebook System Power - Low Side D ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TA = 25 °C L = 0.1 mH TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Symbol VDS VGS ID IDM IS IAS EAS PD TJ, Tstg Limit 30 ± 20 14.6 11.6 10.3b, c 8.2b, c 50 4.5 2.3b, c 15 11.25 5 3.2 2.5b, c 1.6b, c - 55 to 150 Unit V Pulsed Drain Current Continuous Source-Drain Diode Current Single Pulse Avalanche Current Single Pulse Avalanche Energy A mJ Maximum Power Dissipation W Operating Junction and Storage Temperature Range °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, d Maximum Junction-to-Foot (Drain) Notes: a. Based on TC = 25 °C. b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 s. d. Maximum under Steady State condition...