SI4496DY

www.DataSheet.co.kr Si4496DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1]. When implemented in P-Spice, these values have matching characteristic curves to the Single Pulse Transient Thermal Impedance curves for the MOSFET. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. Note: For a detailed explanation of implementing these values in P-SPICE, refer to Application Note AN609 Thermal Simulations Of Power MOSFETs on P-SPICE Platform. R-C THERMAL MODEL FOR TANK CONFIGURATION R-C VALUES FOR TANK CONFIGURATION Thermal Resistance (°C/W) Junction to RT1 RT2 RT3 RT4 Junction to CT1 CT2 CT3 CT4 Ambient 2.3490 29.5589 32.0670 26.1202 Ambient 1.1969 m 32.0544 m 1.4071 3.6901 Case N/A N/A N/A N/A Case N/A N/A N/A N/A Foot 250.9288 m 6.7329 9.1880 1.7701 Foot 563.0696 µ 13.6449 m 174.2752 m 4.8071 m Thermal Capacitance (Joules/°C) This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate data sheet of the same number for guaranteed specification limits. Document Number: 74109 Revision 02-Sep-05 www.vishay.com 1 Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr Si4496DY_RC Vishay Siliconix R-C THERMAL...