SI4473DY

www.DataSheet.co.kr Si4473DY Vishay Siliconix P-Channel 14-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) −14 FEATURES ID (A) −13 −11 rDS(on) (W) 0.011 @ VGS = −4.5 V 0.016 @ VGS = −2.5 V D TrenchFETr Power MOSFET APPLICATION D Battery Switch for Portable Equipment SO-8 S S S G 1 2 3 4 Top View Ordering Information: Si4473DY Si4473DY-T1 (with Tape and Reel) Si4473DY—E3 (Lead (Pb)-Free) Si4473DY-T1—E3 (Lead (Pb)-Free with Tape and Reel) 8 7 6 5 D D D D G S D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IS PD TJ, Tstg 10 secs Steady State −14 "12 Unit V −13 −10 −50 −2.7 3.0 1.9 −55 to 150 −9 −7 A −1.36 1.5 0.95 W _C THERMAL RESISTANCE RATINGS Parameter M i Maximum J Junction-to-Ambient ti t A bi ta Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 71613 S-50154—Rev. C, 31-Jan-05 www.vishay.com t v 10 sec Steady State Steady State Symbol RthJA RthJF Typical 33 70 16 Maximum 42 84 21 Unit _C/W 1 Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr Si4473DY Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero ...