SI4463BDY

www.DataSheet.co.kr Si4463BDY New Product Vishay Siliconix P-Channel 2.5-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.011 @ VGS = −10 V −20 0.014 @ VGS = −4.5 V 0.020 @ VGS = −2.5 V ID (A) −13.7 −12.3 −10.3 S SO-8 S S S G 1 2 3 4 Top View Ordering Information: Si4463BDY—E3 (Lead Free) Si4463BDY-T1—E3 (Lead Free with Tape and Reel) 8 7 6 5 D D D D G D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IS PD TJ, Tstg 10 secs Steady State −20 "12 Unit V −13.7 −11.1 −50 −2.7 3.0 1.9 −55 to 150 −9.8 −7.9 A −1.36 1.5 0.95 W _C THERMAL RESISTANCE RATINGS Parameter M i Maximum J Junction-to-Ambient ti t A bi ta Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 72789 S-40433—Rev. A, 15-Mar-04 www.vishay.com t v 10 sec Steady State Steady State Symbol RthJA RthJF Typical 35 70 17 Maximum 42 84 21 Unit _C/W 1 Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr Si4463BDY Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta VGS(th) IGSS IDSS ID(o...