Field-Stop IGBT
FGH60N60UFD — 600V, 60A Field Stop IGBT
FGH60N60UFD
600V, 60A Field Stop IGBT
Features
• High Current Capability • Low ...
Description
FGH60N60UFD — 600V, 60A Field Stop IGBT
FGH60N60UFD
600V, 60A Field Stop IGBT
Features
High Current Capability Low Saturation Voltage: VCE(sat) = 1.9 V @ IC = 60 A High Input Impedance Fast Switching RoHS Compliant
Applications
Solar Inverter, UPS, Welder and PFC
March 2015
General Description
Using novel field stop IGBT technology, Fairchild’s field stop IGBTs offer the optimum performance for solar inverter, UPS, welder and PFC applications where low conduction and switching losses are essential.
E C G
COLLECTOR (FLANGE)
Absolute Maximum Ratings
Symbol
VCES VGES
IC ICM (1)
PD TJ Tstg TL
Description
Collector to Emitter Voltage
Gate to Emitter Voltage
Transient Gate-to-Emitter Voltage Collector Current Collector Current Pulsed Collector Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature
@ TC = 25oC @ TC = 100oC
@ TC = 25oC @ TC = 25oC @ TC = 100oC
Storage Temperature Range
Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds
Notes: 1: Repetitive test , Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
RθJC(IGBT) RθJC(Diode) RθJA
Parameter
Thermal Resistance, Junction to Case Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient
C
G
E
Ratings
600 ±20 ±30 120 60 180 298 119 -55 to +150 -55 to +150 300
Typ.
-
Max.
0.33 1.1 40
Unit
V V A A A W W oC oC oC
Unit
oC/W oC/W oC/W
©2013 Fairchild Semiconductor Corporation
1
FGH60N60UFD Rev.1...
Similar Datasheet
- FGH60N60UFD Field-Stop IGBT - Fairchild Semiconductor
- FGH60N60UFDTU_F085 IGBT - Fairchild Semiconductor