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BU100

Part Number	BU100
Manufacturer	Inchange Semiconductor
Description	Silicon NPN Power Transistors
Published	Feb 10, 2012
Detailed Description	isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 60V(Min.) ·Low Collect...
Datasheet	BU100 PDF File

Overview

isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 60V(Min.
) ·Low Collector Saturation Voltage- : VCE(sat)= 3.
3V(Max.
)@ IC= 8A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for horizontal deflection output stage of CTV receivers and high voltage,fast switching and industrial applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 10 A ICM Collector Current-Peak Repetitive 15 A PC Collector Power Dissipation @ T...

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