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New Product
VSSB310
Vishay General Semiconductor
Surface Mount Trench MOS Barrier Schottky Rectif...
www.DataSheet.co.kr
New Product
VSSB310
Vishay General Semiconductor
Surface Mount Trench MOS Barrier
Schottky Rectifier
FEATURES
Low profile package
TMBS
®
Ideal for automated placement Trench MOS
Schottky technology Low power losses, high efficiency Low forward voltage drop Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C Compliant to RoHS directive 2002/95/EC accordance to WEEE 2002/96/EC and in
DO-214AA (SMB)
TYPICAL APPLICATIONS PRIMARY CHARACTERISTICS
IF(AV) VRRM IFSM EAS VF at IF = 3.0 A TJ max. 3.0 A 100 V 80 A 50 mJ 0.56 V 150 °C
For use in low voltage, high frequency inverters, freewheeling, dc-to-dc converters, and polarity protection applications.
MECHANICAL DATA
Case: DO-214AA (SMB) Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS compliant, commercial grade Terminals: Matte tin plated leads, solderable J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test Polarity: Color band denotes the cathode end per
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER Device marking code Maximum repetitive peak reverse voltage Maximum DC forward current Peak forward surge current 10 ms single half sine-wave superimposed on rated load Non-repetitive avalanche energy at TJ = 25 °C, L = 60 mH Peak repetitive reverse current at tp = 2 µs, 1 kHz, TJ = 38 °C ± 2 °C Operating junction and storage temperature range Notes (1) Mounted on 10 mm x 10 mm pad areas, 1 oz. FR4 P.C.B. (2) Free air, mount...