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2SC3011 Dataheets PDF



Part Number 2SC3011
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description Silicon NPN epitaxial planer Transistor
Datasheet 2SC3011 Datasheet2SC3011 Datasheet (PDF)

TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC3011 2SC3011 UHF~C Band Low Noise Amplifier Applications Unit: mm · High gain: |S21e|2 = 12dB (typ.) · Low noise figure: NF = 2.3dB (typ.), f = 1 GHz · High fT: fT = 6.5 GHz Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Emitter current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IE PC Tj Tstg .

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TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC3011 2SC3011 UHF~C Band Low Noise Amplifier Applications Unit: mm · High gain: |S21e|2 = 12dB (typ.) · Low noise figure: NF = 2.3dB (typ.), f = 1 GHz · High fT: fT = 6.5 GHz Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Emitter current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IE PC Tj Tstg Rating 20 7 3 30 10 150 125 -55~125 Unit V V V mA mA mW °C °C Microwave Characteristics (Ta = 25°C) JEDEC ― JEITA SC-59 TOSHIBA 2-3F1A Weight: 0.012 g (typ.) Characteristics Transition frequency Insertion gain Noise figure Symbol fT ïS21eï2 NF Test Condition VCE = 5 V, IC = 10 mA VCE = 5 V, IC = 10 mA, f = 1 GHz VCE = 5 V, IC = 5 mA, f = 1 GHz Min Typ. Max Unit ¾ 6.5 ¾ GHz ¾ 12 ¾ dB ¾ 2.3 ¾ dB Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Collector cut-off current Emitter cut-off current Collecter-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Collecter output capacitance Reverse transfer capacitance Input capacitance ICBO IEBO V (BR) CEO hFE VCE (sat) VBE (sat) Cob Cre Cib VCB = 10 V, IE = 0 VEB = 1.0 V, IC = 0 IC = 0.5 mA, IB = 0 VCE = 5 V, IC = 10 mA IC = 10 mA, IB = 1 mA VCB = 5 V, IE = 0, f = 1 MHz VEB = 0, IC = 0, f = 1 MHz Note: Cre is measured by 3-terminal method with capacitance bridge. Min Typ. Max Unit ¾ ¾ 1.0 ¾ ¾ 1.0 7 ¾¾ 30 120 ¾ ¾ 0.1 ¾ ¾ 0.87 ¾ (Note) ¾ ¾ 0.7 0.9 0.5 ¾ ¾ 0.8 ¾ mA mA V V V pF pF pF 1 2003-03-19 Marking 2SC3011 2 2003-03-19 2SC3011 3 2003-03-19 2SC3011 4 2003-03-19 2SC3011 RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. · The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. · The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. · The information contained herein is subject to change without notice. 5 2003-03-19 .


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