Document
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
2SC3011
2SC3011
UHF~C Band Low Noise Amplifier Applications
Unit: mm
· High gain: |S21e|2 = 12dB (typ.) · Low noise figure: NF = 2.3dB (typ.), f = 1 GHz · High fT: fT = 6.5 GHz
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Emitter current Collector power dissipation Junction temperature Storage temperature range
Symbol
VCBO VCEO VEBO
IC IE PC Tj Tstg
Rating
20 7 3 30 10 150 125 -55~125
Unit
V V V mA mA mW °C °C
Microwave Characteristics (Ta = 25°C)
JEDEC
―
JEITA
SC-59
TOSHIBA
2-3F1A
Weight: 0.012 g (typ.)
Characteristics
Transition frequency Insertion gain Noise figure
Symbol
fT ïS21eï2
NF
Test Condition
VCE = 5 V, IC = 10 mA VCE = 5 V, IC = 10 mA, f = 1 GHz VCE = 5 V, IC = 5 mA, f = 1 GHz
Min Typ. Max Unit
¾ 6.5 ¾ GHz ¾ 12 ¾ dB ¾ 2.3 ¾ dB
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Collector cut-off current Emitter cut-off current Collecter-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Collecter output capacitance Reverse transfer capacitance Input capacitance
ICBO IEBO V (BR) CEO hFE VCE (sat) VBE (sat) Cob Cre Cib
VCB = 10 V, IE = 0 VEB = 1.0 V, IC = 0 IC = 0.5 mA, IB = 0 VCE = 5 V, IC = 10 mA
IC = 10 mA, IB = 1 mA
VCB = 5 V, IE = 0, f = 1 MHz
VEB = 0, IC = 0, f = 1 MHz
Note: Cre is measured by 3-terminal method with capacitance bridge.
Min Typ. Max Unit
¾ ¾ 1.0
¾ ¾ 1.0
7 ¾¾
30 120 ¾
¾ 0.1 ¾
¾ 0.87 ¾
(Note)
¾ ¾
0.7 0.9 0.5 ¾
¾ 0.8 ¾
mA mA V
V V pF pF pF
1 2003-03-19
Marking
2SC3011
2 2003-03-19
2SC3011
3 2003-03-19
2SC3011
4 2003-03-19
2SC3011
RESTRICTIONS ON PRODUCT USE
000707EAA
· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc..
· The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk.
· The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others.
· The information contained herein is subject to change without notice.
5 2003-03-19
.