2SC2954

DATA SHEET SHEET DATA SILICON TRANSISTOR 2SC2954 NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD DESCRIPTION The 2SC2954 is an NPN epitaxial silicon transistor disigned for low noise wide band amplifier and buffer amplifier of OSC, for VHF and CATV bnad. PACKAGE DIMENSIONS (Unit: mm) FEATURES Low Noise and High Gain. NF: 2.3 dB, 2.4 dB 0.8 MIN. 4.5±0.1 1.6±0.2 1.5±0.1
S21e
: 20 dB, 12.5 dB Large PT in Small Package. PT: 2 W with 16 cm  0.7 mm Ceramic Substrate. 2 E 0.42 ±0.06 C B 0.42±0.06 1.5 0.47 ±0.06 3.0 0.41 +0.05 −0.03 ABSOLUTE MAXIMUM RATINGS (TA = 25
C) Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Termal Resistance Junction Temperature Storage Temperature VCBO VCEO VEBO IC PT * Rth(j-a)* 35 18 3.0 150 2.0 62.5 V V V mA W Term, Connection E : Emitter C : Collector (Fin) B : Base (SOT-89) C/W Tj 150 C Tstg 65 to +150 C * With 16 cm2  0.7 mm Ceramic Substrate Document No. P10405EJ3V0DS00 (3rd edition) (Previous No. TC-1458A) Date Published March 1997 N Printed in Japan © 4.0±0.25 2.5±0.1 f = 200 MHz, 500 MHz 1994 2SC2954 ELECTRICAL CHARACTERISTICS (TA = 25
C) CHARACTERISTIC Collector Cutoff Current DC Current Gain Gain Bandwidth Product Feedback Capacitance SYMBOL ICBO hFE fT Cre TEST CONDITIONS VCB = 10 V, IE = 0 VCE = 10 V, IC = 50 mA *1 VCE = 10 V, IC = 50 mA VCB = 10 V, Emitter Grounded, f = 1.0 MHz VCE = 10 V, IC = 50 mA, f = 500 MHz RG = 50  VCE = 10 V, IC...