Type
OptiMOSTM3 Power-Transistor
Features • Ideal for high frequency switching and sync. rec. • Optimized technology fo...
Type
OptiMOSTM3 Power-
Transistor
Features Ideal for high frequency switching and sync. rec. Optimized technology for DC/DC converters Excellent gate charge x R DS(on) product (FOM) Superior thermal resistance N-channel, normal level 100% avalanche tested Pb-free plating; RoHS compliant Qualified according to JEDEC1) for target applications
Halogen-free according to IEC61249-2-21
Type
BSC076N06NS3 G
BSC076N06NS3 G
Product Summary VDS RDS(on),max ID
60 V 7.6 mW 50 A
Package
PG-TDSON-8
Marking
076N06NS
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Value
Unit
Continuous drain current
I D V GS=10 V, T C=25 °C
50 A
V GS=10 V, T C=100 °C
47
V GS=10 V, T C=25 °C, R thJA =50K/W J412)
14
Pulsed drain current3)
I D,pulse T C=25 °C
200
Avalanche energy, single pulse4) E AS I D=50 A, R GS=25 W
47 mJ
© 2009 Infineon Technologies AG V GS
±20 V
1) J-STD20 and JESD22 2) Device on 40 mm x 40 ...
