IXFH76N06-12

www.DataSheet.co.kr HiPerFETTM Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family VDSS IXFH 76 N06-11 IXFH 76 N06-12 IXFH 76 N07-11 IXFH 76 N07-12 60 V 60 V 70 V 70 V ID25 76 A 76 A 76 A 76 A RDS(on) 11 mW 12 mW 11 mW 12 mW Preliminary data sheet Symbol VDSS VDGR VGS VGSM ID25 ID119 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Symbol Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 10 kW Continuous Transient TC TC TC TC = 25°C (Chip capability = 125 A) = 119°C, limited by external leads = 25°C, pulse width limited by TJM = 25°C N06 N07 N06 N07 Maximum Ratings 60 70 60 70 ±20 ±30 76 76 304 100 30 2 5 360 -55 ... +175 175 -55 ... +150 V V V V V V A A A A mJ J V/ns TO-247 AD (TAB) G = Gate, S = Source, Features q D = Drain, TAB = Drain TC = 25°C IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, TJ £ 150°C, RG = 2 W TC = 25°C q W °C °C °C °C g q q q 1.6 mm (0.062 in.) from case for 10 s Mounting torque 300 6 q International standard package JEDEC TO-247 AD Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Fast intrinsic Rectifier 1.15/10 Nm/lb.in. Applications q q q q Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. N06 N07 60 70 2.0 V V V nA mA mA mW mW VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 mA VDS = VGS, ID = 4 mA VGS = ±20 VDC, VDS = 0 VDS = 0.8 VDSS...