Power MOSFET
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HiPerFETTM Power MOSFETs
N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family
VDSS IXFH ...
Description
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HiPerFETTM Power MOSFETs
N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family
VDSS IXFH 76 N06-11 IXFH 76 N06-12 IXFH 76 N07-11 IXFH 76 N07-12 60 V 60 V 70 V 70 V
ID25 76 A 76 A 76 A 76 A
RDS(on) 11 mW 12 mW 11 mW 12 mW
Preliminary data sheet
Symbol VDSS VDGR VGS VGSM ID25 ID119 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Symbol
Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 10 kW Continuous Transient TC TC TC TC = 25°C (Chip capability = 125 A) = 119°C, limited by external leads = 25°C, pulse width limited by TJM = 25°C N06 N07 N06 N07
Maximum Ratings 60 70 60 70 ±20 ±30 76 76 304 100 30 2 5 360 -55 ... +175 175 -55 ... +150 V V V V V V A A A A mJ J V/ns
TO-247 AD
(TAB)
G = Gate, S = Source, Features
q
D = Drain, TAB = Drain
TC = 25°C IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, TJ £ 150°C, RG = 2 W TC = 25°C
q
W °C °C °C °C g
q q
q
1.6 mm (0.062 in.) from case for 10 s Mounting torque
300 6
q
International standard package JEDEC TO-247 AD Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Fast intrinsic Rectifier
1.15/10 Nm/lb.in. Applications
q q q q
Test Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. N06 N07 60 70 2.0 V V V nA mA mA mW mW
VDSS VGS(th) IGSS IDSS RDS(on)
VGS = 0 V, ID = 250 mA VDS = VGS, ID = 4 mA VGS = ±20 VDC, VDS = 0 VDS = 0.8 VDSS...
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