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New Product
VSIB15A20 thru VSIB15A80
Vishay General Semiconductor
Single-Phase Single In-Line Bridge Rectifiers
FEATURES • UL recognition file number E54214 • Thin single in-line package • Glass passivated chip junction • High surge current capability • High case dielectric strength of 2500 VRMS • Solder dip 260 °C, 40 s • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC TYPICAL APPLICATIONS General purpose use in ac-to-dc bridge full wave rectification for switching power supply, home appliances, office equipment, industrial automation applications.
15 A 200 V to 800 V 200 A 10 µA 1.0 V 150 °C
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Case Style GSIB-5S
PRIMARY CHARACTERISTICS
IF(AV) VRRM IFSM IR VF TJ max.
MECHANICAL DATA Case: GSIB-5S Epoxy meets UL 94 V-0 flammability rating Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD22-B102 E3 suffix for consumer grade, meets JESD 201 class 1A whisker test Polarity: As marked on body Mounting Torque: 10 cm-kg (8.8 inches-lbs) max. Recommended Torque: 5.7 cm-kg (5 inches-lbs)
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forward rectified output current at TC = 107 °C (1) TA = 25 °C (2) SYMBOL VRRM VRMS VDC IF(AV) IFSM I2t TJ, TSTG VSIB15A20 200 140 200 VSIB15A40 400 280 400 15 3.5 200 166 - 55 to + 150 VSIB15A60 600 420 600 VSIB15A80 800 560 800 UNIT V V V A A A2 s °C
Peak forward surge current single sine-wave superimposed on rated load Rating for fusing (t < 8.3 ms) Operating junction and storage temperature range Notes: (1) Unit case mounted on aluminum plate heatsink (2) Units mounted on P.C.B. without heatsink
Document Number: 84652 Revision: 15-Dec-08
For technical questions within your region, please contact one of the following:
[email protected],
[email protected],
[email protected]
www.vishay.com 1
Datasheet pdf - http://www.DataSheet4U.net/
www.DataSheet.co.kr
New Product
VSIB15A20 thru VSIB15A80
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER Maximum instantaneous forward voltage drop per diode Maximum DC reverse current at rated DC blocking voltage per diode TEST CONDITIONS 7.5 A TA = 25 °C TA = 125 °C SYMBOL VSIB15A20 VSIB15A40 VSIB15A60 VSIB15A80 VF IR 1.00 10 250 UNIT V µA
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER Typical thermal resistance Notes: (1) Unit case mounted on aluminum plate heatsink (2) Units mounted on P.C.B. without heatsink (3) Recommended mounting position is to bolt down on heatsink with silicone thermal compound for maximum heat transfer with #6 screw SYMBOL VSIB15A20 VSIB15A40 VSIB15A60 VSIB15A80 RθJA RθJC 22 1.5 (1)
(2)
UNIT °C/W
ORDERING INFORMATION (Example)
PREFERRED P/N VSIB15A60-E3/45 UNIT WEIGHT (g) 7.0 PREFERRED PACKAGE CODE 45 BASE QUANTITY 20 DELIVERY MODE Tube
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
20 200
Average Forward Output Current (A)
Heatsink Mounting, TC 15
Peak Forward Surge Current (A)
150
10
100
5 P.C.B. Mounting, TA
50 1.0 Cycle 0 1 10 100
0 0 25 50 75 100 125 150
Temperature (°C)
Number of Cycles at 60 Hz
Figure 1. Derating Curve Output Rectified Current
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current Per Diode
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For technical questions within your region, please contact one of the following:
[email protected],
[email protected],
[email protected]
Document Number: 84652 Revision: 15-Dec-08
Datasheet pdf - http://www.DataSheet4U.net/
www.DataSheet.co.kr
New Product
VSIB15A20 thru VSIB15A80
Vishay General Semiconductor
100
1000
Instantaneous Forward Current (A)
10
TJ = 150 °C
Junction Capacitance (pF)
100
1
TJ = 25 °C
10
0.1
TJ = 125 °C
0.01 0.3
0.5
0.7
0.9
1.1
1.3
1 0.1
1
10
100
Instantaneous Forward Voltage (V)
Reverse Voltage (V)
Figure 3. Typical Forward Characteristics Per Diode
Figure 5. Typical Junction Capacitance Per Diode
1000
10 TJ = 150 °C
100 TJ = 125 °C 10
Transient Thermal Impedance (°C/W)
100
Instantaneous Reverse Current (µA)
1
1
0.1
TJ = 25 °C
0.01 20 40 60 80
0.1 0.01
0.1
1
10
Percent of Rated Peak Reverse Voltage (%)
t - Heating Time (s)
Figure 4. Typical Reverse Characteristics Per Diode
Figure 6. Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS in millimeters
Case Style GSIB-5S
4.6 ± 0.2 3.6 ± 0.2 3.5 ± 0.2 3.2 ± 0.2 2.7 ± 0.2
30 ± 0.3
20 ± 0.3
+ 2.5 ± 0.2 2.2 ± 0.2
1 ± 0.1 10 ± 0.2
17.5 ± 0.5
4 ± 0.2
7.5 ± 0.2
7.5 ± 0.2
0.7 ± 0.1
11 ± 0.2
5
Document Number: 84652 Revision: 15-Dec-08
For technical questions within your region, please contact one of the following:
[email protected],
[email protected],
[email protected]
www.vishay.com 3
Datasheet pdf - http://www.DataSheet4U.net/
www.DataSheet.co.kr
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