VSB2045

www.DataSheet.co.kr New Product VSB2045 Vishay General Semiconductor Photovoltaic Solar Cell Protection Schottky Rectifier Ultra Low VF = 0.30 V at IF = 5.0 A FEATURES Trench MOS Schottky technology TMBS ® Low forward voltage drop, low power losses High efficiency operation High forward surge capability Solder dip 275 °C max. 10 s, per JESD 22-B106 P600 Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC Halogen-free according to IEC 61249-2-21 definition PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 20 A TOP max. 20 A 45 V 250 A 0.42 V 150 °C TYPICAL APPLICATIONS For use in solar cell junction box as a bypass diode for protection, using DC forward current without reverse bias. MECHANICAL DATA Case: P600 Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS compliant, and commercial grade Terminals: Matte tin plated leads, solderable J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test Polarity: Color band denotes cathode end per MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER Device marking code Maximum repetitive peak reverse voltage Maximum average forward rectified current (fig. 1) Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load Operating junction temperature range Storage temperature range Junction temperature in DC forward current without reverse bias, t ≤ 1 h (fig. 2) VRRM IF(AV) (1) IF(AV) (2) SYMBOL VSB2045 V2...