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V30150C, VF30150C, VB30150C, VI30150C
Vishay General Semiconductor
Dual High Voltage Trench MOS Barrier...
www.vishay.com
V30150C, VF30150C, VB30150C, VI30150C
Vishay General Semiconductor
Dual High Voltage Trench MOS Barrier
Schottky Rectifier
Ultra Low VF = 0.56 V at IF = 5 A
TO-220AB
TMBS ®
ITO-220AB
V30150C
3 2 1
PIN 1
PIN 2
PIN 3
CASE
TO-263AB K
123 VF30150C
PIN 1
PIN 2
PIN 3
TO-262AA K
FEATURES
Trench MOS
Schottky technology Low forward voltage drop, low power losses High efficiency operation Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C (for TO-263AB package) Solder bath temperature 275 °C maximum, 10 s,
per JESD 22-B106 (for TO-220AB, ITO-220AB and TO-262AA package) Material categorization: For definitions of compliance please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, DC/DC converters and reverse battery protection.
2 1
VB30150C
PIN 1
K
3 2 1
VI30150C
PIN 1
PIN 2
PIN 2
HEATSINK
PIN 3
K
PRIMARY CHARACTERISTICS
IF(AV) VRRM IFSM VF at IF = 15 A TJ max.
Package
2 x 15 A 150 V 140 A 0.71 V 150 °C
TO-220AB, ITO-220AB, TO-263AB, TO-262AA
Diode variation
Common cathode
MECHANICAL DATA
Case: TO-220AB, ITO-220AB, TO-263AB and TO-262AA
Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade
Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs max.
MAXIMUM R...