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V20150SG Dataheets PDF



Part Number V20150SG
Manufacturers Vishay
Logo Vishay
Description High-Voltage Trench MOS Barrier Schottky Rectifier
Datasheet V20150SG DatasheetV20150SG Datasheet (PDF)

www.vishay.com V20150SG, VI20150SG Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.57 V at IF = 5 A TO-220AB TMBS ® TO-262AA K 3 2 1 V20150SG PIN 1 PIN 2 PIN 3 CASE 3 2 1 VI20150SG PIN 1 PIN 2 PIN 3 K FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of complianc.

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www.vishay.com V20150SG, VI20150SG Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.57 V at IF = 5 A TO-220AB TMBS ® TO-262AA K 3 2 1 V20150SG PIN 1 PIN 2 PIN 3 CASE 3 2 1 VI20150SG PIN 1 PIN 2 PIN 3 K FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection. PRIMARY CHARACTERISTICS IF(AV) 20 A VRRM 150 V IFSM 140 A VF at IF = 20 A TJ max. 0.77 V 150 °C Package TO-220AB, TO-262AA Diode variation Single MECHANICAL DATA Case: TO-220AB and TO-262AA Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test Polarity: as marked Mounting Torque: 10 in-lbs maximum MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Maximum repetitive peak reverse voltage VRRM Maximum average forward rectified current (fig. 1) Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load IF(AV) IFSM Voltage rate of change (rated VR) dV/dt Operating junction and storage temperature range TJ, TSTG V20150SG VI20150SG 150 20 140 10 000 -55 to +150 UNIT V A A V/μs °C Revision: 09-Nov-17 1 Document Number: 89248 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 www.vishay.com V20150SG, VI20150SG Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS SYMBOL TYP. IF = 5 A 0.72 IF = 10 A TA = 25 °C 0.87 Instantaneous forward voltage IF = 20 A IF = 5 A IF = 10 A TA = 125 °C VF (1) 1.24 0.57 0.65 IF = 20 A 0.77 Reverse current TA = 25 °C 1.5 VR = 100 V TA = 125 °C IR (2) 2 TA = 25 °C - VR = 150 V TA = 125 °C 4 Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width  40 ms MAX. - 1.60 - 0.84 - 200 20 UNIT V μA mA μA mA THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL V20150SG Typical thermal resistance RJC 2.0 VI20150SG UNIT °C/W ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N UNIT WEIGHT (g) TO-220AB V20150SG-M3/4W 1.88 TO-262AA VI20150SG-M3/4W 1.45 PACKAGE CODE 4W 4W BASE QUANTITY 50/tube 50/tube DELIVERY MODE Tube Tube Revision: 09-Nov-17 2 Document Number: 89248 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 www.vishay.com V20150SG, VI20150SG Vishay General Semiconductor RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) Average Forward Rectified Current (A) 25 Resistive or Inductive Load 20 15 10 5 Mounted on Specific Heatsink 0 0 25 50 75 100 125 150 175 Case Temperature (°C) Fig. 1 - Maximum Forward Current Derating Curve Instantaneous Reverse Current (mA) 100 10 TA = 150 °C 1 TA = 125 °C 0.1 TA = 100 °C 0.01 0.001 TA = 25 °C 0.0001 10 20 30 40 50 60 70 80 90 100 Percent of Rated Peak Reverse Voltage (%) Fig. 4 - Typical Reverse Characteristics Average Power Loss (W) 20 18 16 14 12 10 8 6 4 2 0 0 D = 0.8 D = 0.5 D = 0.3 D = 0.2 D = 0.1 D = 1.0 T D = tp/T tp 2 4 6 8 10 12 14 16 18 20 22 24 Average Forward Current (A) Fig. 2 - Forward Power Dissipation Characteristics Transient Thermal Impedance (°C/W) 10 Junction to Case 1 0.01 0.1 1 10 100 t - Pulse Duration (s) Fig. 5 - Typical Transient Thermal Impedance Instantaneous Forward Current (A) 100 TA = 150 °C 10 TA = 125 °C 1 TA = 100 °C TA = 25 °C 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Instantaneous Forward Voltage (V) Fig. 3 - Typical Instantaneous Forward Characteristics Junction Capacitance (pF) 10 000 1000 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p 100 10 0.1 1 10 100 Reverse Voltage (V) Fig. 6 - Typical Junction Capacitance Revision: 09-Nov-17 3 Document Number: 89248 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAI.


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