www.vishay.com
V20150SG, VI20150SG
Vishay General Semiconductor
High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.57 V at IF = 5 A
TO-220AB
TMBS ®
TO-262AA
K
3 2 1
V20150SG
PIN 1
PIN 2
PIN 3
CASE
3 2 1
VI20150SG
PIN 1
PIN 2
PIN 3
K
FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per
JESD 22-B106 • Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection.
PRIMARY CHARACTERISTICS
IF(AV)
20 A
VRRM
150 V
IFSM
140 A
VF at IF = 20 A TJ max.
0.77 V 150 °C
Package
TO-220AB, TO-262AA
Diode variation
Single
MECHANICAL DATA
Case: TO-220AB and TO-262AA Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade
Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test
Polarity: as marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Maximum repetitive peak reverse voltage
VRRM
Maximum average forward rectified current (fig. 1)
Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load
IF(AV) IFSM
Voltage rate of change (rated VR)
dV/dt
Operating junction and storage temperature range
TJ, TSTG
V20150SG
VI20150SG
150
20
140
10 000 -55 to +150
UNIT V A
A
V/μs °C
Revision: 09-Nov-17
1
Document Number: 89248
For technical questions within your region:
[email protected],
[email protected],
[email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com
V20150SG, VI20150SG
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
IF = 5 A
0.72
IF = 10 A
TA = 25 °C
0.87
Instantaneous forward voltage
IF = 20 A IF = 5 A IF = 10 A
TA = 125 °C
VF (1)
1.24 0.57 0.65
IF = 20 A
0.77
Reverse current
TA = 25 °C
1.5
VR = 100 V
TA = 125 °C
IR (2)
2
TA = 25 °C
-
VR = 150 V
TA = 125 °C
4
Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width 40 ms
MAX. -
1.60 -
0.84 -
200 20
UNIT
V
μA mA μA mA
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
V20150SG
Typical thermal resistance
RJC
2.0
VI20150SG
UNIT °C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
UNIT WEIGHT (g)
TO-220AB
V20150SG-M3/4W
1.88
TO-262AA
VI20150SG-M3/4W
1.45
PACKAGE CODE 4W 4W
BASE QUANTITY 50/tube 50/tube
DELIVERY MODE Tube Tube
Revision: 09-Nov-17
2
Document Number: 89248
For technical questions within your region:
[email protected],
[email protected],
[email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com
V20150SG, VI20150SG
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
Average Forward Rectified Current (A)
25 Resistive or Inductive Load
20
15
10
5
Mounted on Specific Heatsink
0
0
25 50 75 100 125 150 175
Case Temperature (°C)
Fig. 1 - Maximum Forward Current Derating Curve
Instantaneous Reverse Current (mA)
100
10
TA = 150 °C
1 TA = 125 °C
0.1
TA = 100 °C
0.01
0.001
TA = 25 °C
0.0001 10 20 30 40 50 60 70 80 90 100 Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Characteristics
Average Power Loss (W)
20 18 16 14 12 10
8 6 4 2 0
0
D = 0.8 D = 0.5 D = 0.3
D = 0.2
D = 0.1
D = 1.0
T
D = tp/T
tp
2 4 6 8 10 12 14 16 18 20 22 24 Average Forward Current (A)
Fig. 2 - Forward Power Dissipation Characteristics
Transient Thermal Impedance (°C/W)
10 Junction to Case
1
0.01
0.1
1
10
100
t - Pulse Duration (s)
Fig. 5 - Typical Transient Thermal Impedance
Instantaneous Forward Current (A)
100 TA = 150 °C
10 TA = 125 °C
1
TA = 100 °C TA = 25 °C
0.1 0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Instantaneous Forward Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics
Junction Capacitance (pF)
10 000 1000
TJ = 25 °C f = 1.0 MHz
Vsig = 50 mVp-p
100
10
0.1
1
10
100
Reverse Voltage (V)
Fig. 6 - Typical Junction Capacitance
Revision: 09-Nov-17
3
Document Number: 89248
For technical questions within your region:
[email protected],
[email protected],
[email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAI.