Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Description
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VF20120C
Vishay General Semiconductor
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.54 V at IF = 5 A
TMBS ®
ITO-220AB
123 VF20120C
PIN 1
PIN 2
PIN 3
FEATURES Trench MOS Schottky technology Low forward voltage drop, low power losses High efficiency operation Solder bath temperature 275 °C max. 10 s, pe...