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VI20100S

Vishay

High-Voltage Trench MOS Barrier Schottky Rectifier

www.vishay.com V20100S, VI20100S Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra...


Vishay

VI20100S

File Download Download VI20100S Datasheet


Description
www.vishay.com V20100S, VI20100S Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.446 V at IF = 5 A TO-220AB TMBS® TO-262AA K V20100S 3 2 1 PIN 1 PIN 2 PIN 3 CASE VI20100S 3 2 1 PIN 1 PIN 2 PIN 3 K FEATURES Trench MOS Schottky technology Low forward voltage drop, low power losses High efficiency operation Low thermal resistance Solder dip 275 °C max. 10 s, per JESD 22-B106 AEC-Q101 qualified Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection. PRIMARY CHARACTERISTICS IF(AV) 20 A VRRM 100 V IFSM VF at IF = 20 A 250 A 0.69 V TJ max. 150 °C Package TO-220AB, TO-262AA Diode variation Single die MECHANICAL DATA Case: TO-220AB and TO-262AA Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade Base P/NHM3 - halogen-free, RoHS-compliant, and AEC-Q101 qualified Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test, HM3 suffix meets JESD 201 class 2 whisker test Polarity: As marked Mounting Torque: 10 in-lbs maximum MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Maximum repetitive peak reverse voltage Maximum average forward rectified curren...




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